Design and fabrication of field-plated normally off β-Ga2O3 MOSFET with laminated-ferroelectric charge storage gate for high power application

Normally-Off-$\beta$ -Ga2O3 Power MOSFET With Ferroelectric Charge Storage Gate Stack Structure

(2020) Zhaoqing Feng et al.   IEEE ELECTRON DEVICE LETTERS

Lateral β-Ga2O3 MOSFETs With High Power Figure of Merit of 277 MW/cm2

(2020) Yuanjie Lv et al.   IEEE ELECTRON DEVICE LETTERS

A field-plated Ga2O3 MOSFET with near 2-kV breakdown voltage and 520 mΩ · cm2 on-resistance

(2019) Ke Zeng et al.   Applied Physics Express

A 800 V β‐Ga 2 O 3 Metal‐Oxide Semiconductor Field‐Effect Transistor with High Power Figure‐of Merit of Over 86.3 MW/cm 2

(2019) Zhaoqing Feng et al.   PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE

Lateral 1.8 kV $\beta$ -Ga2O3 MOSFET With 155 MW/cm2 Power Figure of Merit

(2019) Kornelius Tetzner et al.   IEEE ELECTRON DEVICE LETTERS

Lateral source field-plated β-Ga2O3 MOSFET with recorded breakdown voltage of 2360 V and low specific on-resistance of 560 mΩ cm2

(2019) Yuanjie Lv et al.   SEMICONDUCTOR SCIENCE AND TECHNOLOGY

Enhancement‐Mode β ‐Ga 2 O 3 Metal‐Oxide‐Semiconductor Field‐Effect Transistor with High Breakdown Voltage over 3000 V Realized by Oxygen Annealing

(2019) Yuanjie Lv et al.   Physica Status Solidi-Rapid Research Letters

Band alignment of SiO 2 /(Al x Ga 1-x ) 2 O 3 (0 ≤ x ≤ 0.49) determined by X-ray photoelectron spectroscopy

(2018) Zhaoqing Feng et al.   APPLIED SURFACE SCIENCE

Recessed-Gate Enhancement-Mode $\beta $ -Ga2O3 MOSFETs

(2018) Kelson D. Chabak et al.   IEEE ELECTRON DEVICE LETTERS

Band alignments of SiO 2 and HfO 2 dielectrics with (Al x Ga 1-x ) 2 O 3 film (0≤ x ≤0.53) grown on Ga 2 O 3 buffer layer on sapphire

(2018) Zhaoqing Feng et al.   JOURNAL OF ALLOYS AND COMPOUNDS

1.85 kV Breakdown Voltage in Lateral Field-Plated Ga2O3 MOSFETs

(2018) Ke Zeng et al.   IEEE ELECTRON DEVICE LETTERS

Field-Plated Lateral β-Ga2O3 Schottky Barrier Diode with High Reverse Blocking Voltage of More Than 3 kV and High DC Power Figure-of-Merit of 500 MW/cm2

(2018) Zhuangzhuang Hu et al.   IEEE ELECTRON DEVICE LETTERS

Ga2O3MOSFETs Using Spin-On-Glass Source/Drain Doping Technology

(2017) Ke Zeng et al.   IEEE ELECTRON DEVICE LETTERS

High-Performance Depletion/Enhancement-ode $\beta$ -Ga2O3 on Insulator (GOOI) Field-Effect Transistors With Record Drain Currents of 600/450 mA/mm

(2017) Hong Zhou et al.   IEEE ELECTRON DEVICE LETTERS

Enhancement-mode Ga2O3 wrap-gate fin field-effect transistors on native (100) β-Ga2O3 substrate with high breakdown voltage

(2016) Kelson D. Chabak et al.   APPLIED PHYSICS LETTERS

Field-Plated Ga2O3MOSFETs With a Breakdown Voltage of Over 750 V

(2016) Man Hoi Wong et al.   IEEE ELECTRON DEVICE LETTERS

3.8-MV/cm Breakdown Strength of MOVPE-Grown Sn-Doped $\beta $ -Ga2O3MOSFETs

(2016) Andrew J. Green et al.   IEEE ELECTRON DEVICE LETTERS

Band Alignments of Atomic Layer Deposited ZrO 2 and HfO 2 High-k Dielectrics with (-201) β-Ga 2 O 3

(2016) Virginia D. Wheeler et al.   ECS Journal of Solid State Science and Technology

Band alignment and electrical properties of Al2O3/β-Ga2O3 heterojunctions

(2014) Takafumi Kamimura et al.   APPLIED PHYSICS LETTERS

High-voltage field effect transistors with wide-bandgap β-Ga2O3 nanomembranes

(2014) Wan Sik Hwang et al.   APPLIED PHYSICS LETTERS

Si-Ion Implantation Doping in β-Ga2O3and Its Application to Fabrication of Low-Resistance Ohmic Contacts

(2013) Kohei Sasaki et al.   Applied Physics Express

Depletion-mode Ga2O3 metal-oxide-semiconductor field-effect transistors on β-Ga2O3 (010) substrates and temperature dependence of their device characteristics

(2013) Masataka Higashiwaki et al.   APPLIED PHYSICS LETTERS

$\hbox{Ga}_{2} \hbox{O}_{3}$ Schottky Barrier Diodes Fabricated by Using Single-Crystal $\beta$– $\hbox{Ga}_{2} \hbox{O}_{3}$ (010) Substrates

(2013) Kohei Sasaki et al.   IEEE ELECTRON DEVICE LETTERS

Device-Quality $\beta$-Ga$_{2}$O$_{3}$ Epitaxial Films Fabricated by Ozone Molecular Beam Epitaxy

(2012) Kohei Sasaki et al.   Applied Physics Express

Gallium oxide (Ga2O3) metal-semiconductor field-effect transistors on single-crystal β-Ga2O3 (010) substrates

(2012) Masataka Higashiwaki et al.   APPLIED PHYSICS LETTERS