Band Alignment and Interface Recombination in NiO/β-Ga2O3 Type-II p-n Heterojunctions

Published 2020 View Full Article

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Title
Band Alignment and Interface Recombination in NiO/β-Ga2O3 Type-II p-n Heterojunctions
Authors
Keywords
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Journal
IEEE TRANSACTIONS ON ELECTRON DEVICES
Volume 67, Issue 8, Pages 3341-3347
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Online
2020-06-20
DOI
10.1109/ted.2020.3001249

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