CMOS compatible electrode materials selection in oxide-based memory devices

Electronic resistance switching in the Al/TiOx/Al structure for forming-free and area-scalable memory

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Nanoscale cation motion in TaOx, HfOx and TiOx memristive systems

(2015) Anja Wedig et al.   Nature Nanotechnology

Resistive switching phenomena: A review of statistical physics approaches

(2015) Jae Sung Lee et al.   Applied Physics Reviews

Materials selection for oxide-based resistive random access memories

(2014) Yuzheng Guo et al.   APPLIED PHYSICS LETTERS

Recent progress in resistive random access memories: Materials, switching mechanisms, and performance

(2014) F. Pan et al.   MATERIALS SCIENCE & ENGINEERING R-REPORTS

RRAMs based on anionic and cationic switching: a short overview

(2014) Sergiu Clima et al.   Physica Status Solidi-Rapid Research Letters

Band alignment between Ta2O5 and metals for resistive random access memory electrodes engineering

(2013) V. Y.-Q. Zhuo et al.   APPLIED PHYSICS LETTERS

Improved Switching Uniformity and Low-Voltage Operation in ${\rm TaO}_{x}$-Based RRAM Using Ge Reactive Layer

(2013) Victor Yi-Qian Zhuo et al.   IEEE ELECTRON DEVICE LETTERS

Migration of interfacial oxygen ions modulated resistive switching in oxide-based memory devices

(2013) C. Chen et al.   JOURNAL OF APPLIED PHYSICS

First-principles simulation of oxygen diffusion in HfOx: Role in the resistive switching mechanism

(2012) S. Clima et al.   APPLIED PHYSICS LETTERS

First principles calculations of oxygen vacancy-ordering effects in resistance change memory materials incorporating binary transition metal oxides

(2012) Blanka Magyari-Köpe et al.   JOURNAL OF MATERIALS SCIENCE

Memristive devices for computing

(2012) J. Joshua Yang et al.   Nature Nanotechnology

Metal–Oxide RRAM

(2012) H.-S. Philip Wong et al.   PROCEEDINGS OF THE IEEE

Emerging memories: resistive switching mechanisms and current status

(2012) Doo Seok Jeong et al.   REPORTS ON PROGRESS IN PHYSICS

Electrode dependence of filament formation in HfO2 resistive-switching memory

(2011) Kuan-Liang Lin et al.   JOURNAL OF APPLIED PHYSICS

Metal oxide resistive memory switching mechanism based on conductive filament properties

(2011) G. Bersuker et al.   JOURNAL OF APPLIED PHYSICS

Role of Interface Reaction on Resistive Switching of Metal/Amorphous TiO2/Al RRAM Devices

(2011) Hu Young Jeong et al.   JOURNAL OF THE ELECTROCHEMICAL SOCIETY

Sub-nanosecond switching of a tantalum oxide memristor

(2011) Antonio C Torrezan et al.   NANOTECHNOLOGY

A fast, high-endurance and scalable non-volatile memory device made from asymmetric Ta2O5−x/TaO2−x bilayer structures

(2011) Myoung-Jae Lee et al.   NATURE MATERIALS

High switching endurance in TaOx memristive devices

(2010) J. Joshua Yang et al.   APPLIED PHYSICS LETTERS

Complementary resistive switches for passive nanocrossbar memories

(2010) Eike Linn et al.   NATURE MATERIALS

Atomic structure of conducting nanofilaments in TiO2 resistive switching memory

(2010) Deok-Hwang Kwon et al.   Nature Nanotechnology

Redox-Based Resistive Switching Memories - Nanoionic Mechanisms, Prospects, and Challenges

(2009) Rainer Waser et al.   ADVANCED MATERIALS

Effects of metal electrodes on the resistive memory switching property of NiO thin films

(2008) C. B. Lee et al.   APPLIED PHYSICS LETTERS

Resistive switching in transition metal oxides

(2008) Akihito Sawa   Materials Today

Memristive switching mechanism for metal/oxide/metal nanodevices

(2008) J. Joshua Yang et al.   Nature Nanotechnology