Role of defects in the thermal droop of InGaN-based light emitting diodes

Observations of exciton–surface plasmon polariton coupling and exciton–phonon coupling in InGaN/GaN quantum wells covered with Au, Ag, and Al films

(2015) Y Estrin et al.   JOURNAL OF PHYSICS-CONDENSED MATTER

High-power low-droop violet semipolar (303¯1¯) InGaN/GaN light-emitting diodes with thick active layer design

(2014) Daniel L. Becerra et al.   APPLIED PHYSICS LETTERS

Characterization of the deep levels responsible for non-radiative recombination in InGaN/GaN light-emitting diodes

(2014) M. Meneghini et al.   APPLIED PHYSICS LETTERS

GaN-Based LEDs With Hot/Cold Factor Improved by the Electron Blocking Layer

(2014) Kin-Tak Lam et al.   Journal of Display Technology

Correlating electroluminescence characterization and physics-based models of InGaN/GaN LEDs: Pitfalls and open issues

(2014) Marco Calciati et al.   AIP Advances

Identification of nnp and npp Auger recombination as significant contributor to the efficiency droop in (GaIn)N quantum wells by visualization of hot carriers in photoluminescence

(2013) M. Binder et al.   APPLIED PHYSICS LETTERS

Deep levels in n-GaN Doped with Carbon Studied by Deep Level and Minority Carrier Transient Spectroscopies

(2013) Unhi Honda et al.   JAPANESE JOURNAL OF APPLIED PHYSICS

Direct Measurement of Auger Electrons Emitted from a Semiconductor Light-Emitting Diode under Electrical Injection: Identification of the Dominant Mechanism for Efficiency Droop

(2013) Justin Iveland et al.   PHYSICAL REVIEW LETTERS

The Hot-Cold Effect on Optical Properties for Nitride-Based Green LEDs by Ammonia Source Preflow

(2013) C. K. Wang et al.   ECS Journal of Solid State Science and Technology

Reduction in Thermal Droop Using Thick Single-Quantum-Well Structure in Semipolar ($20\bar{2}\bar{1}$) Blue Light-Emitting Diodes

(2012) Chih-Chien Pan et al.   Applied Physics Express

Reduced longitudinal optical phonon-exciton interaction in InGaN/GaN nanorod structures

(2012) P. Renwick et al.   APPLIED PHYSICS LETTERS

Temperature dependent efficiency droop in GaInN light-emitting diodes with different current densities

(2012) David S. Meyaard et al.   APPLIED PHYSICS LETTERS

Influence of indium content and temperature on Auger-like recombination in InGaN quantum wells grown on (111) silicon substrates

(2012) B. Galler et al.   APPLIED PHYSICS LETTERS

Carrier escape mechanism dependence on barrier thickness and temperature in InGaN quantum well solar cells

(2012) J. R. Lang et al.   APPLIED PHYSICS LETTERS

A deep acceptor defect responsible for the yellow luminescence in GaN and AlGaN

(2012) P. Kamyczek et al.   JOURNAL OF APPLIED PHYSICS

Wavelength-dependent determination of the recombination rate coefficients in single-quantum-well GaInN/GaN light emitting diodes

(2012) Dario Schiavon et al.   PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS

Leakage Current Characteristics of Nitride-Based InGaN Light-Emitting Diode

(2011) Kyu-Sang Kim et al.   IEEE PHOTONICS TECHNOLOGY LETTERS

Temperature-dependent light-output characteristics of GaInN light-emitting diodes with different dislocation densities

(2011) Sameer Chhajed et al.   PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE

Stable temperature characteristics of InGaN blue light emitting diodes using AlGaN/GaN/InGaN superlattices as electron blocking layer

(2010) Kyu Sang Kim et al.   APPLIED PHYSICS LETTERS

The exciton-longitudinal-optical-phonon coupling in InGaN/GaN single quantum wells with various cap layer thicknesses

(2010) Xiao-Long Hu et al.   Chinese Physics B

Physical mechanisms for hot-electron degradation in GaN light-emitting diodes

(2010) K. K. Leung et al.   JOURNAL OF APPLIED PHYSICS

Thermal analysis and characterization of the effect of substrate thinning on the peformances of GaN-based light emitting diodes

(2010) H. K. Lee et al.   PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE

Quasiparticle self-consistent GW theory of III-V nitride semiconductors: Bands, gap bowing, and effective masses

(2010) A. Svane et al.   PHYSICAL REVIEW B

On resonant optical excitation and carrier escape in GaInN/GaN quantum wells

(2009) Martin F. Schubert et al.   APPLIED PHYSICS LETTERS

High-Power and High-Efficiency InGaN-Based Light Emitters

(2009) Ansgar Laubsch et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

Trap Assisted Tunneling Induced Currents in Neutron Irradiated AlGaN/GaN HFETs

(2009) James C. Petrosky et al.   IEEE TRANSACTIONS ON NUCLEAR SCIENCE

Quantum confinement effect on the effective mass in two-dimensional electron gas of AlGaN/GaN heterostructures

(2009) A. M. Kurakin et al.   JOURNAL OF APPLIED PHYSICS

Electrical properties and deep traps spectra of a-plane GaN films grown on r-plane sapphire

(2009) A.Y. Polyakov et al.   Materials Science and Engineering B-Advanced Functional Solid-State Materials

Optical properties studies in InGaN/GaN multiple-quantum well

(2009) Lihong Zhu et al.   SOLID-STATE ELECTRONICS

A Closed-Form Model for Thermionic Trap-Assisted Tunneling

(2008) D. Mahaveer Sathaiya et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

Consistent set of band parameters for the group-III nitrides AlN, GaN, and InN

(2008) Patrick Rinke et al.   PHYSICAL REVIEW B