Carrier escape mechanism dependence on barrier thickness and temperature in InGaN quantum well solar cells
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Title
Carrier escape mechanism dependence on barrier thickness and temperature in InGaN quantum well solar cells
Authors
Keywords
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Journal
APPLIED PHYSICS LETTERS
Volume 101, Issue 18, Pages 181105
Publisher
AIP Publishing
Online
2012-10-31
DOI
10.1063/1.4765068
References
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Related references
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- p-n junctions on Ga-face GaN grown by NH3 molecular beam epitaxy with low ideality factors and low reverse currents
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- InGaN/GaN multiple quantum well solar cells with long operating wavelengths
- (2009) R. Dahal et al. APPLIED PHYSICS LETTERS
- High quantum efficiency InGaN/GaN solar cells with 2.95 eV band gap
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- High doping level in Mg-doped GaN layers grown at low temperature
- (2008) A. Dussaigne et al. JOURNAL OF APPLIED PHYSICS
- Growth, fabrication, and characterization of InGaN solar cells
- (2008) X. Chen et al. PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE
- Analysis of tandem solar cell efficiencies under AM1.5G spectrum using a rapid flux calculation method
- (2007) S. P. Bremner et al. PROGRESS IN PHOTOVOLTAICS
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