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Title
Mobility–stability trade-off in oxide thin-film transistors
Authors
Keywords
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Journal
Nature Electronics
Volume 4, Issue 11, Pages 800-807
Publisher
Springer Science and Business Media LLC
Online
2021-11-23
DOI
10.1038/s41928-021-00671-0
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- High-Voltage Amorphous InGaZnO TFT With Al2O3High- $k$ Dielectric for Low-Temperature Monolithic 3-D Integration
- (2016) Ming-Jiue Yu et al. IEEE TRANSACTIONS ON ELECTRON DEVICES
- Ultrawide band gap amorphous oxide semiconductor, Ga–Zn–O
- (2016) Junghwan Kim et al. THIN SOLID FILMS
- Hydrogen Bistability as the Origin of Photo-Bias-Thermal Instabilities in Amorphous Oxide Semiconductors
- (2015) Youngho Kang et al. Advanced Electronic Materials
- “Butterfly Effect” in CuO/Graphene Composite Nanosheets: A Small Interfacial Adjustment Triggers Big Changes in Electronic Structure and Li-Ion Storage Performance
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- Highly sensitive room temperature carbon monoxide detection using SnO2nanoparticle-decorated semiconducting single-walled carbon nanotubes
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- (2009) Jae-Heon Shin et al. ETRI JOURNAL
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