Singularity structures for sub-250 nm emissions from AlGaN-based semiconductors

Monolayer‐Thick GaN/AlN Multilayer Heterostructures for Deep‐Ultraviolet Optoelectronics

(2021) Valentin Jmerik et al.   Physica Status Solidi-Rapid Research Letters

Room-temperature operation of AlGaN ultraviolet-B laser diode at 298 nm on lattice-relaxed Al0.6Ga0.4N/AlN/sapphire

(2020) Kosuke Sato et al.   Applied Physics Express

Monolayer GaN excitonic deep ultraviolet light emitting diodes

(2020) Y. Wu et al.   APPLIED PHYSICS LETTERS

Controlled bunching approach for achieving high efficiency active region in AlGaN-based deep ultraviolet light-emitting devices with dual-band emission

(2020) Y. H. Sun et al.   APPLIED PHYSICS LETTERS

Exploratory clinical trial on the safety and bactericidal effect of 222-nm ultraviolet C irradiation in healthy humans

(2020) Tomoaki Fukui et al.   PLoS One

Far-UVC light (222 nm) efficiently and safely inactivates airborne human coronaviruses

(2020) Manuela Buonanno et al.   Scientific Reports

Milliwatt power 233 nm AlGaN-based deep UV-LEDs on sapphire substrates

(2020) Neysha Lobo-Ploch et al.   APPLIED PHYSICS LETTERS

Influence of light absorption on the performance characteristics of UV LEDs with emission between 239 and 217 nm

(2019) Frank Mehnke et al.   Applied Physics Express

Carrier localization structure combined with current micropaths in AlGaN quantum wells grown on an AlN template with macrosteps

(2019) K. Kojima et al.   APPLIED PHYSICS LETTERS

Deep Ultraviolet Light Source from Ultrathin GaN/AlN MQW Structures with Output Power Over 2 Watt

(2019) Yixin Wang et al.   Advanced Optical Materials

The emergence and prospects of deep-ultraviolet light-emitting diode technologies

(2019) Michael Kneissl et al.   Nature Photonics

Optical light polarization and light extraction efficiency of AlGaN-based LEDs emitting between 264 and 220 nm

(2019) Martin Guttmann et al.   JAPANESE JOURNAL OF APPLIED PHYSICS

Sapphire substrate off-angle and off-direction dependences on characteristics of AlGaN-based deep ultraviolet light-emitting diodes

(2019) Hisanori Kojima et al.   JAPANESE JOURNAL OF APPLIED PHYSICS

Single peak deep ultraviolet emission and high internal quantum efficiency in AlGaN quantum wells grown on large miscut sapphire substrates

(2019) Houqiang Xu et al.   SUPERLATTICES AND MICROSTRUCTURES

Stimulated emission, photoluminescence, and localisation of nonequilibrium charge carriers in ultrathin (monolayer) GaN/AlN quantum wells

(2019) E V Lutsenko et al.   QUANTUM ELECTRONICS

Unambiguously Enhanced Ultraviolet Luminescence of AlGaN Wavy Quantum Well Structures Grown on Large Misoriented Sapphire Substrate

(2019) Haiding Sun et al.   ADVANCED FUNCTIONAL MATERIALS

Room-temperature stability of excitons and transverse-electric polarized deep-ultraviolet luminescence in atomically thin GaN quantum wells

(2019) Dylan Bayerl et al.   APPLIED PHYSICS LETTERS

Self‐Limiting Growth of Ultrathin GaN/AlN Quantum Wells for Highly Efficient Deep Ultraviolet Emitters

(2019) Hirotsugu Kobayashi et al.   Advanced Optical Materials

A 271.8 nm deep-ultraviolet laser diode for room temperature operation

(2019) Ziyi Zhang et al.   Applied Physics Express

GaN/AlN quantum-disk nanorod 280 nm deep ultraviolet light emitting diodes by molecular beam epitaxy

(2019) Tongbo Wei et al.   OPTICS LETTERS

Al x Ga1− x N-based semipolar deep ultraviolet light-emitting diodes

(2018) Ryota Akaike et al.   Applied Physics Express

234 nm and 246 nm AlN-Delta-GaN quantum well deep ultraviolet light-emitting diodes

(2018) Cheng Liu et al.   APPLIED PHYSICS LETTERS

Theoretical study of nitride short period superlattices

(2018) I Gorczyca et al.   JOURNAL OF PHYSICS-CONDENSED MATTER

Far-UVC light: A new tool to control the spread of airborne-mediated microbial diseases

(2018) David Welch et al.   Scientific Reports

High-efficiency electron-beam-pumped sub-240-nm ultraviolet emitters based on ultra-thin GaN/AlN multiple quantum wells grown by plasma-assisted molecular-beam epitaxy on c-Al2O3

(2018) Valentin N. Jmerik et al.   Applied Physics Express

A Review of AlGaN-Based Deep-Ultraviolet Light-Emitting Diodes on Sapphire

(2018) Yosuke Nagasawa et al.   Applied Sciences-Basel

Al x Ga1− x N-Based Quantum Wells Fabricated on Macrosteps Effectively Suppressing Nonradiative Recombination

(2018) Minehiro Hayakawa et al.   Advanced Optical Materials

Dominant Nonradiative Recombination Paths and Their Activation Processes in AlxGa1−xN -related Materials

(2018) Shuhei Ichikawa et al.   Physical Review Applied

Gas Sensing of Nitrogen Oxide Utilizing Spectrally Pure Deep UV LEDs

(2017) Frank Mehnke et al.   IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS

Uneven AlGaN multiple quantum well for deep-ultraviolet LEDs grown on macrosteps and impact on electroluminescence spectral output

(2017) Michiko Kaneda et al.   JAPANESE JOURNAL OF APPLIED PHYSICS

Controlling the morphology transition between step-flow growth and step-bunching growth

(2017) Konrad Bellmann et al.   JOURNAL OF CRYSTAL GROWTH

Electrical determination of current injection and internal quantum efficiencies in AlGaN-based deep-ultraviolet light-emitting diodes

(2017) Guo-Dong Hao et al.   OPTICS EXPRESS

Excitonic localization at macrostep edges in AlGaN/AlGaN multiple quantum wells

(2017) Mengjun Hou et al.   SUPERLATTICES AND MICROSTRUCTURES

AlN/GaN Digital Alloy for Mid- and Deep-Ultraviolet Optoelectronics

(2017) Wei Sun et al.   Scientific Reports

High-Output-Power Ultraviolet Light Source from Quasi-2D GaN Quantum Structure

(2016) Xin Rong et al.   ADVANCED MATERIALS

Deep ultraviolet emission from ultra-thin GaN/AlN heterostructures

(2016) Dylan Bayerl et al.   APPLIED PHYSICS LETTERS

Surface kinetics in AlN growth: A universal model for the control of surface morphology in III-nitrides

(2016) Isaac Bryan et al.   JOURNAL OF CRYSTAL GROWTH

The role of surface kinetics on composition and quality of AlGaN

(2016) Isaac Bryan et al.   JOURNAL OF CRYSTAL GROWTH

Preparation of high-quality AlN on sapphire by high-temperature face-to-face annealing

(2016) Hideto Miyake et al.   JOURNAL OF CRYSTAL GROWTH

Reduction in the concentration of cation vacancies by proper Si-doping in the well layers of high AlN mole fraction AlxGa1–xN multiple quantum wells grown by metalorganic vapor phase epitaxy

(2015) S. F. Chichibu et al.   APPLIED PHYSICS LETTERS

Bistable nanofacet structures on vicinal AlN(0001) surfaces

(2014) Mitsuru Funato et al.   JOURNAL OF APPLIED PHYSICS

High power AlGaN ultraviolet light emitters

(2014) Max Shatalov et al.   SEMICONDUCTOR SCIENCE AND TECHNOLOGY

Performance and Reliability of Deep-Ultraviolet Light-Emitting Diodes Fabricated on AlN Substrates Prepared by Hydride Vapor Phase Epitaxy

(2013) Toru Kinoshita et al.   Applied Physics Express

Impacts of Si-doping and resultant cation vacancy formation on the luminescence dynamics for the near-band-edge emission of Al0.6Ga0.4N films grown on AlN templates by metalorganic vapor phase epitaxy

(2013) S. F. Chichibu et al.   JOURNAL OF APPLIED PHYSICS

Temperature-dependent emission shift and carrier dynamics in deep ultraviolet AlGaN/AlGaN quantum wells

(2013) Jianping Zeng et al.   Physica Status Solidi-Rapid Research Letters

Complete set of deformation potentials for AlN determined by reflectance spectroscopy under uniaxial stress

(2013) Ryota Ishii et al.   PHYSICAL REVIEW B

Homoepitaxy and Photoluminescence Properties of (0001) AlN

(2012) Mitsuru Funato et al.   Applied Physics Express

High Output Power from 260 nm Pseudomorphic Ultraviolet Light-Emitting Diodes with Improved Thermal Performance

(2011) James R. Grandusky et al.   Applied Physics Express

Structural design of AlN/GaN superlattices for deep-ultraviolet light-emitting diodes with high emission efficiency

(2011) Katsumasa Kamiya et al.   APPLIED PHYSICS LETTERS

Large optical gain AlGaN-delta-GaN quantum wells laser active regions in mid- and deep-ultraviolet spectral regimes

(2011) Jing Zhang et al.   APPLIED PHYSICS LETTERS

Extremely high internal quantum efficiencies from AlGaN/AlN quantum wells emitting in the deep ultraviolet spectral region

(2011) Ryan G. Banal et al.   APPLIED PHYSICS LETTERS

Polarization property of deep-ultraviolet light emission from C-plane AlN/GaN short-period superlattices

(2011) Yoshitaka Taniyasu et al.   APPLIED PHYSICS LETTERS

Influence of exciton-phonon coupling and strain on the anisotropic optical response of wurtzite AlN around the band edge

(2011) Georg Rossbach et al.   PHYSICAL REVIEW B

Improvement in Output Power of 280-nm Deep Ultraviolet Light-Emitting Diode by Using AlGaN Multi Quantum Wells

(2010) Akira Fujioka et al.   Applied Physics Express

Improved Efficiency of 255–280 nm AlGaN-Based Light-Emitting Diodes

(2010) Cyril Pernot et al.   Applied Physics Express

222 nm Deep-Ultraviolet AlGaN Quantum Well Light-Emitting Diode with Vertical Emission Properties

(2010) Hideki Hirayama et al.   Applied Physics Express

100 mW deep-ultraviolet emission from aluminium-nitride-based quantum wells pumped by an electron beam

(2010) Takao Oto et al.   Nature Photonics

All deformation potentials in GaN determined by reflectance spectroscopy under uniaxial stress: Definite breakdown of the quasicubic approximation

(2010) Ryota Ishii et al.   PHYSICAL REVIEW B

Polarization-Induced Hole Doping in Wide-Band-Gap Uniaxial Semiconductor Heterostructures

(2010) J. Simon et al.   SCIENCE

Deep ultraviolet emitting AlGaN quantum wells with high internal quantum efficiency

(2009) A. Bhattacharyya et al.   APPLIED PHYSICS LETTERS

Optical anisotropy in [0001]-orientedAlxGa1−xN/AlNquantum wells(x>0.69)

(2009) R. G. Banal et al.   PHYSICAL REVIEW B

Demonstration of an ultraviolet 336 nm AlGaN multiple-quantum-well laser diode

(2008) Harumasa Yoshida et al.   APPLIED PHYSICS LETTERS

AlGaN quantum well structures for deep-UV LEDs grown by plasma-assisted MBE using sub-monolayer digital-alloying technique

(2008) V.N. Jmerik et al.   JOURNAL OF CRYSTAL GROWTH

Ultraviolet light-emitting diodes based on group three nitrides

(2008) Asif Khan et al.   Nature Photonics