All deformation potentials in GaN determined by reflectance spectroscopy under uniaxial stress: Definite breakdown of the quasicubic approximation

Continuous-Wave Operation of 520 nm Green InGaN-Based Laser Diodes on Semi-Polar {20\bar21} GaN Substrates

(2009) Yusuke Yoshizumi et al.   Applied Physics Express

Theoretical investigation on polarization control of semipolar-oriented InGaN quantum-well emission using (Al)InGaN alloy substrates

(2009) A. Atsushi Yamaguchi   APPLIED PHYSICS LETTERS

Strain effects in group-III nitrides: Deformation potentials for AlN, GaN, and InN

(2009) Qimin Yan et al.   APPLIED PHYSICS LETTERS

Γ7valence band symmetry related hole fine splitting of bound excitons in ZnO observed in magneto-optical studies

(2009) Markus R. Wagner et al.   PHYSICAL REVIEW B

Blue Laser Diodes Fabricated onm-Plane GaN Substrates

(2008) Yuhzoh Tsuda et al.   Applied Physics Express

Successful fabrication of white light emitting diodes by using extremely high external quantum efficiency blue chips

(2008) Yukio Narukawa et al.   PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE

Polarization switching phenomena in semipolarInxGa1−xN/GaNquantum well active layers

(2008) M. Ueda et al.   PHYSICAL REVIEW B