GaN MMICs on a diamond heat spreader with through-substrate vias fabricated by deep dry etching process

Over 80% power-added-efficiency GaN high-electron-mobility transistors on free-standing GaN substrates

(2020) Yusuke Kumazaki et al.   Applied Physics Express

Deep GaN through-substrate via etching using Cl2/BCl3 inductively coupled plasma

(2020) Naoya Okamoto et al.   JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A

Surface activated bonding of SiC/diamond for thermal management of high-output power GaN HEMTs

(2019) Yuichi Minoura et al.   JAPANESE JOURNAL OF APPLIED PHYSICS

An Over 20-W/mm S-Band InAlGaN/GaN HEMT With SiC/Diamond-Bonded Heat Spreader

(2018) Toshihiro Ohki et al.   IEEE ELECTRON DEVICE LETTERS

AlGaN/GaN high-electron mobility transistors with low thermal resistance grown on single-crystal diamond (111) substrates by metalorganic vapor-phase epitaxy

(2011) Kazuyuki Hirama et al.   APPLIED PHYSICS LETTERS

Thermal characterization of MBE-grown GaN/AlGaN/GaN device on single crystalline diamond

(2011) J. Kuzmik et al.   JOURNAL OF APPLIED PHYSICS

Enhancement-Mode GaN MIS-HEMTs With n-GaN/i-AlN/n-GaN Triple Cap Layer and High- $k$ Gate Dielectrics

(2010) M. Kanamura et al.   IEEE ELECTRON DEVICE LETTERS

Elimination of pillar associated with micropipe of SiC in high-rate inductively coupled plasma etching

(2009) Naoya Okamoto   JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A

SiC via fabrication for wide-band-gap high electron mobility transistor/microwave monolithic integrated circuit devices

(2008) L. F. Voss et al.   JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B