SiC via fabrication for wide-band-gap high electron mobility transistor/microwave monolithic integrated circuit devices

Published 2008 View Full Article

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Title
SiC via fabrication for wide-band-gap high electron mobility transistor/microwave monolithic integrated circuit devices
Authors
Keywords
-
Journal
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B
Volume 26, Issue 2, Pages 487
Publisher
American Vacuum Society
Online
2008-04-18
DOI
10.1116/1.2837849

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