Deep GaN through-substrate via etching using Cl2/BCl3 inductively coupled plasma

Published 2020 View Full Article

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Title
Deep GaN through-substrate via etching using Cl2/BCl3 inductively coupled plasma
Authors
Keywords
-
Journal
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A
Volume 38, Issue 6, Pages 063003
Publisher
American Vacuum Society
Online
2020-10-07
DOI
10.1116/6.0000526

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