Surface activated bonding of SiC/diamond for thermal management of high-output power GaN HEMTs

Published 2019 View Full Article

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Title
Surface activated bonding of SiC/diamond for thermal management of high-output power GaN HEMTs
Authors
Keywords
-
Journal
JAPANESE JOURNAL OF APPLIED PHYSICS
Volume -, Issue -, Pages -
Publisher
Japan Society of Applied Physics
Online
2019-11-26
DOI
10.7567/1347-4065/ab5b68

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