Over 80% power-added-efficiency GaN high-electron-mobility transistors on free-standing GaN substrates

Impact of n-GaN cap layer doping on the gate leakage behavior in AlGaN/GaN HEMTs grown on Si and GaN substrates

(2020) Junji Kotani et al.   JOURNAL OF APPLIED PHYSICS

Improved operation stability of Al2O3/AlGaN/GaN MOS high-electron-mobility transistors grown on GaN substrates

(2019) Yuji Ando et al.   Applied Physics Express

Energy issues in microwave food processing: A review of developments and the enabling potentials of solid-state power delivery

(2018) J. C. Atuonwu et al.   CRITICAL REVIEWS IN FOOD SCIENCE AND NUTRITION

AlGaN/GaN High Electron Mobility Transistors on Semi-Insulating Ammono-GaN Substrates with Regrown Ohmic Contacts

(2018) Wojciech Wojtasiak et al.   Micromachines

Hydride-vapor-phase epitaxial growth of highly pure GaN layers with smooth as-grown surfaces on freestanding GaN substrates

(2017) Hajime Fujikura et al.   JAPANESE JOURNAL OF APPLIED PHYSICS

Robust SiNx/AlGaN Interface in GaN HEMTs Passivated by Thick LPCVD-Grown SiNx Layer

(2015) Xinhua Wang et al.   IEEE ELECTRON DEVICE LETTERS

N-Polar GaN MIS-HEMTs With a 12.1-W/mm Continuous-Wave Output Power Density at 4 GHz on Sapphire Substrate

(2011) Seshadri Kolluri et al.   IEEE ELECTRON DEVICE LETTERS

12.88 W/mm GaN High Electron Mobility Transistor on Silicon Substrate for High Voltage Operation

(2009) Shinichi Hoshi et al.   Applied Physics Express

III-nitride heterostructure field-effect transistors grown on semi-insulating GaN substrate without regrowth interface charge

(2008) J. P. Liu et al.   APPLIED PHYSICS LETTERS

Excellent crystallinity of truly bulk ammonothermal GaN

(2008) R. Dwiliński et al.   JOURNAL OF CRYSTAL GROWTH