The impact of interfacial Si contamination on GaN-on-GaN regrowth for high power vertical devices

Determination of electronic band structure by electron holography of etched-and-regrown interfaces in GaN p-i-n diodes

(2019) Shanthan R. Alugubelli et al.   APPLIED PHYSICS LETTERS

Demonstration of 1.27 kV Etch-Then-Regrow GaN ${p}$ -${n}$ Junctions With Low Leakage for GaN Power Electronics

(2019) Kai Fu et al.   IEEE ELECTRON DEVICE LETTERS

Development of GaN Vertical Trench-MOSFET With MBE Regrown Channel

(2018) Wenshen Li et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

Investigation of GaN-on-GaN vertical p-n diode with regrown p-GaN by metalorganic chemical vapor deposition

(2018) Kai Fu et al.   APPLIED PHYSICS LETTERS

Review of Commercial GaN Power Devices and GaN-Based Converter Design Challenges

(2016) Edward A. Jones et al.   IEEE Journal of Emerging and Selected Topics in Power Electronics

The suppression of background doping in selective area growth technique for high performance normally-off AlGaN/GaN MOSFET

(2015) Fan Yang et al.   JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS

Determination of the Nitrogen Vacancy as a Shallow Compensating Center in GaN Doped with Divalent Metals

(2015) J. Buckeridge et al.   PHYSICAL REVIEW LETTERS

Polarization Effects of GaN and AlGaN: Polarization Bound Charge, Band Bending, and Electronic Surface States

(2014) Brianna S. Eller et al.   JOURNAL OF ELECTRONIC MATERIALS

Cyclic siloxanes in air, including identification of high levels in Chicago and distinct diurnal variation

(2013) Rachel A. Yucuis et al.   CHEMOSPHERE

Gallium nitride devices for power electronic applications

(2013) B Jayant Baliga   SEMICONDUCTOR SCIENCE AND TECHNOLOGY

Role of nitrogen vacancies in the luminescence of Mg-doped GaN

(2012) Qimin Yan et al.   APPLIED PHYSICS LETTERS

Study of etching-induced damage in GaN by hard X-ray photoelectron spectroscopy

(2011) Tetsuo Narita et al.   PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE

High-temperature molecular beam epitaxial growth of AlGaN/GaN on GaN templates with reduced interface impurity levels

(2010) G. Koblmüller et al.   JOURNAL OF APPLIED PHYSICS

The origin of the high diode-ideality factors in GaInN/GaN multiple quantum well light-emitting diodes

(2009) Di Zhu et al.   APPLIED PHYSICS LETTERS

III-nitride heterostructure field-effect transistors grown on semi-insulating GaN substrate without regrowth interface charge

(2008) J. P. Liu et al.   APPLIED PHYSICS LETTERS

Characterization of plasma etching damage on p-type GaN using Schottky diodes

(2008) M. Kato et al.   JOURNAL OF APPLIED PHYSICS

Vacancies in wurtzite GaN and AlN

(2008) K Laaksonen et al.   JOURNAL OF PHYSICS-CONDENSED MATTER

GaN-Based RF Power Devices and Amplifiers

(2008) U.K. Mishra et al.   PROCEEDINGS OF THE IEEE