III-nitride heterostructure field-effect transistors grown on semi-insulating GaN substrate without regrowth interface charge

Published 2008 View Full Article

  1. Home
  2. Publications
  3. Publication Search
  4. Publication Details
Title
III-nitride heterostructure field-effect transistors grown on semi-insulating GaN substrate without regrowth interface charge
Authors
Keywords
-
Journal
APPLIED PHYSICS LETTERS
Volume 92, Issue 13, Pages 133513
Publisher
AIP Publishing
Online
2008-04-05
DOI
10.1063/1.2906372

Ask authors/readers for more resources

Protocol

Community support

Reagent

Community support

Reprint

Contact the author

Find Funding. Review Successful Grants.

Explore over 25,000 new funding opportunities and over 6,000,000 successful grants.

Explore

Discover Peeref hubs

Discuss science. Find collaborators. Network.

Join a conversation
Webinars Posters Questions Hubs Funding Journals Articles Connect Collections Reviewers About Us FAQs Mobile App Privacy Policy Terms of Use
© Peeref 2019-2024. All rights reserved.