The origin of the high diode-ideality factors in GaInN/GaN multiple quantum well light-emitting diodes

Published 2009 View Full Article

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Title
The origin of the high diode-ideality factors in GaInN/GaN multiple quantum well light-emitting diodes
Authors
Keywords
-
Journal
APPLIED PHYSICS LETTERS
Volume 94, Issue 8, Pages 081113
Publisher
AIP Publishing
Online
2009-02-26
DOI
10.1063/1.3089687
References
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