Impact of edge states on device performance of phosphorene heterojunction tunneling field effect transistors

Title
Impact of edge states on device performance of phosphorene heterojunction tunneling field effect transistors
Authors
Keywords
-
Journal
Nanoscale
Volume 8, Issue 42, Pages 18180-18186
Publisher
Royal Society of Chemistry (RSC)
Online
2016-10-05
DOI
10.1039/c6nr05734a

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