Impact of edge states on device performance of phosphorene heterojunction tunneling field effect transistors
Published 2016 View Full Article
- Home
- Publications
- Publication Search
- Publication Details
Title
Impact of edge states on device performance of phosphorene heterojunction tunneling field effect transistors
Authors
Keywords
-
Journal
Nanoscale
Volume 8, Issue 42, Pages 18180-18186
Publisher
Royal Society of Chemistry (RSC)
Online
2016-10-05
DOI
10.1039/c6nr05734a
References
Ask authors/readers for more resources
Related references
Note: Only part of the references are listed.- Fundamental Limits on the Subthreshold Slope in Schottky Source/Drain Black Phosphorus Field-Effect Transistors
- (2016) Nazila Haratipour et al. ACS Nano
- Design strategy of two-dimensional material field-effect transistors: Engineering the number of layers in phosphorene FETs
- (2016) Demin Yin et al. JOURNAL OF APPLIED PHYSICS
- Stacking Fault Enriching the Electronic and Transport Properties of Few-Layer Phosphorenes and Black Phosphorus
- (2016) Shuangying Lei et al. NANO LETTERS
- Configurable Electrostatically Doped High Performance Bilayer Graphene Tunnel FET
- (2016) Fan W. Chen et al. IEEE Journal of the Electron Devices Society
- Theoretical study of phosphorene tunneling field effect transistors
- (2015) Jiwon Chang et al. APPLIED PHYSICS LETTERS
- Device performance simulations of multilayer black phosphorus tunneling transistors
- (2015) Fei Liu et al. APPLIED PHYSICS LETTERS
- Flexible Black Phosphorus Ambipolar Transistors, Circuits and AM Demodulator
- (2015) Weinan Zhu et al. NANO LETTERS
- Negative differential resistance in monolayer WTe2 tunneling transistors
- (2015) Fei Liu et al. NANOTECHNOLOGY
- A subthermionic tunnel field-effect transistor with an atomically thin channel
- (2015) Deblina Sarkar et al. NATURE
- Scaling laws of band gaps of phosphorene nanoribbons: A tight-binding calculation
- (2015) Esmaeil Taghizadeh Sisakht et al. PHYSICAL REVIEW B
- Phosphorene: An Unexplored 2D Semiconductor with a High Hole Mobility
- (2014) Han Liu et al. ACS Nano
- Two-Dimensional Tunnel Transistors Based on ${\rm Bi}_{2}{\rm Se}_{3}$ Thin Film
- (2014) Qin Zhang et al. IEEE ELECTRON DEVICE LETTERS
- Phosphorene Nanoribbons, Phosphorus Nanotubes, and van der Waals Multilayers
- (2014) Hongyan Guo et al. Journal of Physical Chemistry C
- Black Phosphorus Photodetector for Multispectral, High-Resolution Imaging
- (2014) Michael Engel et al. NANO LETTERS
- Black Phosphorus Radio-Frequency Transistors
- (2014) Han Wang et al. NANO LETTERS
- Strain-Engineering the Anisotropic Electrical Conductance of Few-Layer Black Phosphorus
- (2014) Ruixiang Fei et al. NANO LETTERS
- Black phosphorus field-effect transistors
- (2014) Likai Li et al. Nature Nanotechnology
- Quasiparticle band structure and tight-binding model for single- and bilayer black phosphorus
- (2014) A. N. Rudenko et al. PHYSICAL REVIEW B
- Layer-controlled band gap and anisotropic excitons in few-layer black phosphorus
- (2014) Vy Tran et al. PHYSICAL REVIEW B
- Layer-dependent Band Alignment and Work Function of Few-Layer Phosphorene
- (2014) Yongqing Cai et al. Scientific Reports
- Interband tunneling in two-dimensional crystal semiconductors
- (2013) Nan Ma et al. APPLIED PHYSICS LETTERS
- Device Performance of Heterojunction Tunneling Field-Effect Transistors Based on Transition Metal Dichalcogenide Monolayer
- (2013) Kai-Tak Lam et al. IEEE ELECTRON DEVICE LETTERS
- Dissipative transport in rough edge graphene nanoribbon tunnel transistors
- (2012) Youngki Yoon et al. APPLIED PHYSICS LETTERS
- How Good Can Monolayer MoS2Transistors Be?
- (2011) Youngki Yoon et al. NANO LETTERS
- Tunnel field-effect transistors as energy-efficient electronic switches
- (2011) Adrian M. Ionescu et al. NATURE
- Single-layer MoS2 transistors
- (2011) B. Radisavljevic et al. Nature Nanotechnology
- Barrier-free tunneling in a carbon heterojunction transistor
- (2010) Youngki Yoon et al. APPLIED PHYSICS LETTERS
- A Simulation Study of Graphene-Nanoribbon Tunneling FET With Heterojunction Channel
- (2010) Kai-Tak Lam et al. IEEE ELECTRON DEVICE LETTERS
- Modeling of High-Performance p-Type III–V Heterojunction Tunnel FETs
- (2010) J. Knoch et al. IEEE ELECTRON DEVICE LETTERS
- Complex edge effects in zigzag graphene nanoribbons due to hydrogen loading
- (2010) Sumanta Bhandary et al. PHYSICAL REVIEW B
- Atomically ThinMoS2: A New Direct-Gap Semiconductor
- (2010) Kin Fai Mak et al. PHYSICAL REVIEW LETTERS
- Low-Voltage Tunnel Transistors for Beyond CMOS Logic
- (2010) Alan C. Seabaugh et al. PROCEEDINGS OF THE IEEE
- Performance analysis of statistical samples of graphene nanoribbon tunneling transistors with line edge roughness
- (2009) Mathieu Luisier et al. APPLIED PHYSICS LETTERS
- Computational Study of Tunneling Transistor Based on Graphene Nanoribbon
- (2009) Pei Zhao et al. NANO LETTERS
Publish scientific posters with Peeref
Peeref publishes scientific posters from all research disciplines. Our Diamond Open Access policy means free access to content and no publication fees for authors.
Learn MoreCreate your own webinar
Interested in hosting your own webinar? Check the schedule and propose your idea to the Peeref Content Team.
Create Now