标题
Layer‐Controlled Low‐Power Tunneling Transistors Based on SnS Homojunction
作者
关键词
-
出版物
Advanced Theory and Simulations
Volume 4, Issue 5, Pages 2000290
出版商
Wiley
发表日期
2021-04-03
DOI
10.1002/adts.202000290
参考文献
相关参考文献
注意:仅列出部分参考文献,下载原文获取全部文献信息。- Interlayer Band‐to‐Band Tunneling and Negative Differential Resistance in van der Waals BP/InSe Field‐Effect Transistors
- (2020) Quanshan Lv et al. ADVANCED FUNCTIONAL MATERIALS
- Thickness-controlled black phosphorus tunnel field-effect transistor for low-power switches
- (2020) Seungho Kim et al. Nature Nanotechnology
- Performance Limit of Monolayer WSe2 Transistors; Significantly Outperform Their MoS2 Counterpart
- (2020) Xiaotian Sun et al. ACS Applied Materials & Interfaces
- Liquid metal-based synthesis of high performance monolayer SnS piezoelectric nanogenerators
- (2020) Hareem Khan et al. Nature Communications
- The concept of electrostatic doping and related devices
- (2019) Sorin Cristoloveanu et al. SOLID-STATE ELECTRONICS
- Sub-10 nm Monolayer MoS2 Transistors Using Single-Walled Carbon Nanotubes as an Evaporating Mask
- (2019) Xiaoyang Xiao et al. ACS Applied Materials & Interfaces
- Reconfigurable Black Phosphorus Vertical Tunneling Field-Effect Transistor With Record High ON-Currents
- (2019) Peng Wu et al. IEEE ELECTRON DEVICE LETTERS
- Devices and Circuits Using Novel 2-D Materials: A Perspective for Future VLSI Systems
- (2019) Giovanni V. Resta et al. IEEE TRANSACTIONS ON VERY LARGE SCALE INTEGRATION (VLSI) SYSTEMS
- Impact of electrostatic doping level on the dissipative transport in graphene nanoribbons tunnel field-effect transistors
- (2019) Weixiang Zhang et al. CARBON
- QuantumATK: an integrated platform of electronic and atomic-scale modelling tools
- (2019) Søren Smidstrup et al. JOURNAL OF PHYSICS-CONDENSED MATTER
- Characterization of electron-beam deposited SnS films: Processing, properties, and ohmic contacts
- (2019) Jenifer R. Hajzus et al. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A
- High-performance sub-10-nm monolayer black phosphorene tunneling transistors
- (2018) Hong Li et al. Nano Research
- Novel antimonene tunneling field-effect transistors using an abrupt transition from semiconductor to metal in monolayer and multilayer antimonene heterostructures
- (2018) Jiwon Chang Nanoscale
- Growth of Large-Area SnS Films with Oriented 2D SnS Layers for Energy-Efficient Broadband Optoelectronics
- (2018) Malkeshkumar Patel et al. ADVANCED FUNCTIONAL MATERIALS
- Sub-10 nm Vertical Tunneling Transistors based on Layered Black Phosphorene Homojunction
- (2018) Hong Li et al. APPLIED SURFACE SCIENCE
- Sub-5 nm monolayer black phosphorene tunneling transistors
- (2018) Hong Li et al. NANOTECHNOLOGY
- Bandgap modulated phosphorene based gate drain underlap double-gate TFET
- (2018) Md. Abdullah-Al-Kaiser et al. AIP Advances
- Complementary Black Phosphorus Tunneling Field-Effect Transistors
- (2018) Peng Wu et al. ACS Nano
- Thickness Engineered Tunnel Field-Effect Transistors Based on Phosphorene
- (2017) Fan W. Chen et al. IEEE ELECTRON DEVICE LETTERS
- Electrostatic Doping in Semiconductor Devices
- (2017) Gaurav Gupta et al. IEEE TRANSACTIONS ON ELECTRON DEVICES
- A reconfigurable silicon-on-insulator diode with tunable electrostatic doping
- (2017) Sorin Cristoloveanu et al. JOURNAL OF APPLIED PHYSICS
- Sub-10 nm Nanopattern Architecture for 2D Material Field-Effect Transistors
- (2017) Kai Xu et al. NANO LETTERS
- Wafer-scale production of vertical SnS multilayers for high-performing photoelectric devices
- (2017) Malkeshkumar Patel et al. Nanoscale
- Tunable SnSe2 /WSe2 Heterostructure Tunneling Field Effect Transistor
- (2017) Xiao Yan et al. Small
- Performance Projections for a Reconfigurable Tunnel NanoFET
- (2017) Stefan Blawid et al. IEEE Journal of the Electron Devices Society
- Contacts to solution-synthesized SnS nanoribbons: dependence of barrier height on metal work function
- (2017) Jenifer R. Hajzus et al. Nanoscale
- Double-Gate Negative-Capacitance MOSFET With PZT Gate-Stack on Ultra Thin Body SOI: An Experimentally Calibrated Simulation Study of Device Performance
- (2016) Ali Saeidi et al. IEEE TRANSACTIONS ON ELECTRON DEVICES
- MoS2 Field-Effect Transistor with Sub-10 nm Channel Length
- (2016) Amirhasan Nourbakhsh et al. NANO LETTERS
- Impact of edge states on device performance of phosphorene heterojunction tunneling field effect transistors
- (2016) Fei Liu et al. Nanoscale
- Screening limited switching performance of multilayer 2D semiconductor FETs: the case for SnS
- (2016) Sukrit Sucharitakul et al. Nanoscale
- MoS2 transistors with 1-nanometer gate lengths
- (2016) S. B. Desai et al. SCIENCE
- Theoretical study of phosphorene tunneling field effect transistors
- (2015) Jiwon Chang et al. APPLIED PHYSICS LETTERS
- 2D Semiconductor FETs—Projections and Design for Sub-10 nm VLSI
- (2015) Wei Cao et al. IEEE TRANSACTIONS ON ELECTRON DEVICES
- A subthermionic tunnel field-effect transistor with an atomically thin channel
- (2015) Deblina Sarkar et al. NATURE
- Asymptotic Description of the Time and Temperature Hysteresis in the Framework of Landau-Khalatnikov Equation
- (2014) A. Starkov et al. FERROELECTRICS
- Electrostatic Doping—Controlling the Properties of Carbon-Based FETs With Gates
- (2014) J. Knoch et al. IEEE TRANSACTIONS ON NANOTECHNOLOGY
- Electronics based on two-dimensional materials
- (2014) Gianluca Fiori et al. Nature Nanotechnology
- Optimization of parameters of chemical spray pyrolysis technique to get n and p-type layers of SnS
- (2010) T.H. Sajeesh et al. THIN SOLID FILMS
Create your own webinar
Interested in hosting your own webinar? Check the schedule and propose your idea to the Peeref Content Team.
Create NowAsk a Question. Answer a Question.
Quickly pose questions to the entire community. Debate answers and get clarity on the most important issues facing researchers.
Get Started