Trimethylaluminum as the Metal Precursor for the Atomic Layer Etching of Al2O3 Using Sequential, Self-Limiting Thermal Reactions

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Title
Trimethylaluminum as the Metal Precursor for the Atomic Layer Etching of Al2O3 Using Sequential, Self-Limiting Thermal Reactions
Authors
Keywords
-
Journal
CHEMISTRY OF MATERIALS
Volume 28, Issue 9, Pages 2994-3003
Publisher
American Chemical Society (ACS)
Online
2016-04-11
DOI
10.1021/acs.chemmater.6b00111

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