Full ALD Ta 2 O 5 -based stacks for resistive random access memory grown with in vacuo XPS monitoring

Published 2015 View Full Article

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Title
Full ALD Ta 2 O 5 -based stacks for resistive random access memory grown with in vacuo XPS monitoring
Authors
Keywords
In vacuo XPS, Atomic layer deposition, Ta, 2, O, 5, ReRAM, Interface engineering
Journal
APPLIED SURFACE SCIENCE
Volume 356, Issue -, Pages 454-459
Publisher
Elsevier BV
Online
2015-08-07
DOI
10.1016/j.apsusc.2015.07.217

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