Current conduction and resistive switching characteristics of Sm2O3 and Lu2O3 thin films for low-power flexible memory applications

Record Low-Power Organic RRAM With Sub-20-nA Reset Current

(2013) Wenliang Bai et al.   IEEE ELECTRON DEVICE LETTERS

Fabrication of Flexible, All-Reduced Graphene Oxide Non-Volatile Memory Devices

(2012) Juqing Liu et al.   ADVANCED MATERIALS

The mechanism of the asymmetric SET and RESET speed of graphene oxide based flexible resistive switching memories

(2012) Lu-Hao Wang et al.   APPLIED PHYSICS LETTERS

Effect of Ti doping concentration on resistive switching behaviors of Yb2O3 memory cell

(2012) Somnath Mondal et al.   APPLIED PHYSICS LETTERS

Resistive switching and activity-dependent modifications in Ni-doped graphene oxide thin films

(2012) S. Pinto et al.   APPLIED PHYSICS LETTERS

Improved Resistance Switching Characteristics in Ti-Doped $\hbox{Yb}_{2}\hbox{O}_{3}$ for Resistive Nonvolatile Memory Devices

(2012) Somnath Mondal et al.   IEEE ELECTRON DEVICE LETTERS

Demonstration of Addressable Organic Resistive Memory Utilizing a PC-Interface Memory Cell Tester

(2012) Byungjin Cho et al.   IEEE ELECTRON DEVICE LETTERS

Resistive Switching Characteristics of Tm$_{2}$O $_{3}$, Yb$_{2}$O $_{3}$, and Lu$_{2}$O$_{3}$-Based Metal–Insulator–Metal Memory Devices

(2012) Tung-Ming Pan et al.   IEEE TRANSACTIONS ON NANOTECHNOLOGY

Investigating the improvement of resistive switching trends after post-forming negative bias stress treatment

(2011) Hsueh-Chih Tseng et al.   APPLIED PHYSICS LETTERS

Highly reproducible memory effect of organic multilevel resistive-switch device utilizing graphene oxide sheets/polyimide hybrid nanocomposite

(2011) Chaoxing Wu et al.   APPLIED PHYSICS LETTERS

Flexible Resistive Switching Memory Device Based on Amorphous InGaZnO Film With Excellent Mechanical Endurance

(2011) Z. Q. Wang et al.   IEEE ELECTRON DEVICE LETTERS

Impact of Temperature on the Resistive Switching Behavior of Embedded $\hbox{HfO}_{2}$-Based RRAM Devices

(2011) Christian Walczyk et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

Analysis on switching mechanism of graphene oxide resistive memory device

(2011) Seul Ki Hong et al.   JOURNAL OF APPLIED PHYSICS

Flexible Memristive Memory Array on Plastic Substrates

(2011) Seungjun Kim et al.   NANO LETTERS

Low-Power High-Performance Non-Volatile Memory on a Flexible Substrate with Excellent Endurance

(2010) Chun-Hu Cheng et al.   ADVANCED MATERIALS

Resistive switching characteristics of ZnO thin film grown on stainless steel for flexible nonvolatile memory devices

(2010) Seunghyup Lee et al.   APPLIED PHYSICS LETTERS

Bipolar resistive switching in Cu/AlN/Pt nonvolatile memory device

(2010) C. Chen et al.   APPLIED PHYSICS LETTERS

Flexible Single-Component-Polymer Resistive Memory for Ultrafast and Highly Compatible Nonvolatile Memory Applications

(2010) Yongbian Kuang et al.   IEEE ELECTRON DEVICE LETTERS

Resistance switching in HfO2 metal-insulator-metal devices

(2010) P. Gonon et al.   JOURNAL OF APPLIED PHYSICS

The resistive switching characteristics of a Ti/Gd2O3/Pt RRAM device

(2010) Kou-Chen Liu et al.   MICROELECTRONICS RELIABILITY

A low-temperature-grown TiO2-based device for the flexible stacked RRAM application

(2010) Hu Young Jeong et al.   NANOTECHNOLOGY

Transparent flexible resistive random access memory fabricated at room temperature

(2009) Jung Won Seo et al.   APPLIED PHYSICS LETTERS

Resistive Switching Characteristics of Sol–Gel Zinc Oxide Films for Flexible Memory Applications

(2009) Sungho Kim et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

Resistive switching of aluminum oxide for flexible memory

(2008) Sungho Kim et al.   APPLIED PHYSICS LETTERS

Improved endurance behavior of resistive switching in (Ba,Sr)TiO3 thin films with W top electrode

(2008) Wan Shen et al.   APPLIED PHYSICS LETTERS

Reproducible resistive switching behavior in sputtered CeO2 polycrystalline films

(2008) Chih-Yang Lin et al.   SURFACE & COATINGS TECHNOLOGY