Layered (C 6 H 5 CH 2 NH 3 ) 2 CuBr 4 Perovskite for Multilevel Storage Resistive Switching Memory
出版年份 2020 全文链接
标题
Layered (C
6
H
5
CH
2
NH
3
)
2
CuBr
4
Perovskite for Multilevel Storage Resistive Switching Memory
作者
关键词
-
出版物
ADVANCED FUNCTIONAL MATERIALS
Volume -, Issue -, Pages 2002653
出版商
Wiley
发表日期
2020-05-14
DOI
10.1002/adfm.202002653
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