Total ionizing dose effects of 60Co γ-rays radiation on HfxZr1−xO2 ferroelectric thin film capacitors

Flexible, Temperature-Resistant, and Fatigue-Free Ferroelectric Memory Based on Bi(Fe0.93Mn0.05Ti0.02)O3 Thin Film

(2019) Changhong Yang et al.   ACS Applied Materials & Interfaces

Ionizing Radiation Effect on Memory Characteristics for HfO2-Based Ferroelectric Field-Effect Transistors

(2019) Kuen-Yi Chen et al.   IEEE ELECTRON DEVICE LETTERS

Improved Ferroelectric Switching Endurance of La-Doped Hf0.5Zr0.5O2 Thin Films

(2018) Anna G. Chernikova et al.   ACS Applied Materials & Interfaces

Compatibility of HfN Metal Gate Electrodes With Hf0.5Zr0.5O2 Ferroelectric Thin Films for Ferroelectric Field-Effect Transistors

(2018) Binjian Zeng et al.   IEEE ELECTRON DEVICE LETTERS

Ferroelectric Hf0.5Zr0.5O2 Thin Films: A Review of Recent Advances

(2018) Si Joon Kim et al.   JOM

Nucleation-Limited Ferroelectric Orthorhombic Phase Formation in Hf0.5 Zr0.5 O2 Thin Films

(2018) Young Hwan Lee et al.   Advanced Electronic Materials

HfO2-Based Highly Stable Radiation-Immune Ferroelectric Memory

(2017) Fei Huang et al.   IEEE ELECTRON DEVICE LETTERS

Total ionizing dose effects and annealing behaviors of HfO2-based MOS capacitor

(2017) Yannan Xu et al.   Science China-Information Sciences

Effect of Zr Content on the Wake-Up Effect in Hf1–xZrxO2 Films

(2016) Min Hyuk Park et al.   ACS Applied Materials & Interfaces

Ferroelectricity and ferroelectric resistive switching in sputtered Hf0.5Zr0.5O2 thin films

(2016) Zhen Fan et al.   APPLIED PHYSICS LETTERS

Effects of 60 Co γ-ray irradiation on microstructure and ferroelectric properties of Bi 3.25 La 0.75 Ti 3 O 12 thin films

(2016) Zan Wang et al.   NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS

Ferroelectricity and Antiferroelectricity of Doped Thin HfO2-Based Films

(2015) Min Hyuk Park et al.   ADVANCED MATERIALS

On the structural origins of ferroelectricity in HfO2 thin films

(2015) Xiahan Sang et al.   APPLIED PHYSICS LETTERS

Ferroelectricity in Si-Doped HfO2Revealed: A Binary Lead-Free Ferroelectric

(2014) Dominik Martin et al.   ADVANCED MATERIALS

The Impact of X-Ray and Proton Irradiation on ${\rm HfO}_2/{\rm Hf}$-Based Bipolar Resistive Memories

(2014) J. S. Bi et al.   IEEE TRANSACTIONS ON NUCLEAR SCIENCE

Gamma-ray irradiation effects on electrical properties of ferroelectric PbTiO3 and Pb(Zr0.52Ti0.48)O3 thin films

(2014) Sun A Yang et al.   THIN SOLID FILMS

Towards the Development of Flexible Non-Volatile Memories

(2013) Su-Ting Han et al.   ADVANCED MATERIALS

Incipient Ferroelectricity in Al-Doped HfO2 Thin Films

(2012) Stefan Mueller et al.   ADVANCED FUNCTIONAL MATERIALS

Ferroelectricity in Simple Binary ZrO2 and HfO2

(2012) Johannes Müller et al.   NANO LETTERS

Neutron radiation effects in Bi3.15Nd0.85Ti3O12ferroelectric thin film capacitors

(2012) Bin Liu et al.   Radiation Effects and Defects in Solids

Ferroelectricity in hafnium oxide thin films

(2011) T. S. Böscke et al.   APPLIED PHYSICS LETTERS

Drastic reduction of leakage current in ferroelectric Bi3.15Nd0.85Ti3O12 films by ionizing radiation

(2010) Qunji Shi et al.   NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS

Polarization loss and leakage current reduction in Au/Bi3.15Nd0.85Ti3O12/Pt capacitors induced by electron radiation

(2009) Yushu Li et al.   APPLIED PHYSICS LETTERS