Total ionizing dose effects and annealing behaviors of HfO2-based MOS capacitor

Title
Total ionizing dose effects and annealing behaviors of HfO2-based MOS capacitor
Authors
Keywords
-
Journal
Science China-Information Sciences
Volume 60, Issue 12, Pages -
Publisher
Springer Nature
Online
2017-11-08
DOI
10.1007/s11432-017-9239-5

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