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Title
Demonstration of low forward voltage InGaN-based red LEDs
Authors
Keywords
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Journal
Applied Physics Express
Volume 13, Issue 3, Pages 031001
Publisher
IOP Publishing
Online
2020-01-30
DOI
10.35848/1882-0786/ab7168
References
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Related references
Note: Only part of the references are listed.- Efficient InGaN-based yellow-light-emitting diodes
- (2019) Fengyi Jiang et al. Photonics Research
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- Analysis of strain relaxation process in GaInN/GaN heterostructure by in situ X-ray diffraction monitoring during metalorganic vapor-phase epitaxial growth
- (2013) Daisuke Iida et al. Physica Status Solidi-Rapid Research Letters
- Temperature dependent efficiency droop in GaInN light-emitting diodes with different current densities
- (2012) David S. Meyaard et al. APPLIED PHYSICS LETTERS
- 740-nm emission from InGaN-based LEDs on c-plane sapphire substrates by MOVPE
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- Temperature-dependent light-output characteristics of GaInN light-emitting diodes with different dislocation densities
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