Efficient InGaN-based yellow-light-emitting diodes

3D numerical modeling of the carrier transport and radiative efficiency for InGaN/GaN light emitting diodes with V-shaped pits

(2016) Chi-Kang Li et al.   AIP Advances

Status of GaN-based green light-emitting diodes

(2015) Jun-Lin Liu et al.   Chinese Physics B

A new interpretation for performance improvement of high-efficiency vertical blue light-emitting diodes by InGaN/GaN superlattices

(2015)   JOURNAL OF APPLIED PHYSICS

Hole injection from the sidewall of V-shaped pits into c-plane multiple quantum wells in InGaN light emitting diodes

(2015) Xiaoming Wu et al.   JOURNAL OF APPLIED PHYSICS

Yellow–red emission from (Ga,In)N heterostructures

(2015) B Damilano et al.   JOURNAL OF PHYSICS D-APPLIED PHYSICS

High brightness InGaN-based yellow light-emitting diodes with strain modulation layers grown on Si substrate

(2014) Jianli Zhang et al.   APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING

Electroluminescence from the sidewall quantum wells in the V-shaped pits of InGaN light emitting diodes

(2014) Xiaoming Wu et al.   APPLIED PHYSICS LETTERS

Roles of V-shaped pits on the improvement of quantum efficiency in InGaN/GaN multiple quantum well light-emitting diodes

(2014)   JOURNAL OF APPLIED PHYSICS

InGaN Light-Emitting Diodes onc-Face Sapphire Substrates in Green Gap Spectral Range

(2013) Shinji Saito et al.   Applied Physics Express

Effects of AlN interlayer on growth of GaN-based LED on patterned silicon substrate

(2013) Junlin Liu et al.   CRYSTENGCOMM

White light emitting diodes with super-high luminous efficacy

(2010) Yukio Narukawa et al.   JOURNAL OF PHYSICS D-APPLIED PHYSICS

Optical properties of yellow light-emitting diodes grown on semipolar (112¯2) bulk GaN substrates

(2008) Hitoshi Sato et al.   APPLIED PHYSICS LETTERS