Electroluminescence properties of InGaN/GaN multiple quantum well-based LEDs with different indium contents and different well widths
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Title
Electroluminescence properties of InGaN/GaN multiple quantum well-based LEDs with different indium contents and different well widths
Authors
Keywords
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Journal
Scientific Reports
Volume 7, Issue 1, Pages -
Publisher
Springer Nature
Online
2017-11-06
DOI
10.1038/s41598-017-15561-9
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- (2013) M. K. Shakfa et al. JOURNAL OF APPLIED PHYSICS
- Transfer and recombination mechanism of carriers in phase-separated InGaN quantum wells
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- (2012) S. Hammersley et al. JOURNAL OF APPLIED PHYSICS
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- (2009) Kenneth J. Vampola et al. APPLIED PHYSICS LETTERS
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