Metalorganic vapor-phase epitaxial growth simulation to realize high-quality and high-In-content InGaN alloys

Published 2019 View Full Article

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Title
Metalorganic vapor-phase epitaxial growth simulation to realize high-quality and high-In-content InGaN alloys
Authors
Keywords
A1. Computer simulation, A1. Growth models, A3. Metalorganic vapor phase epitaxy, B1. Nitrides, B2. Semiconducting III-V materials, B3. Light emitting diodes
Journal
JOURNAL OF CRYSTAL GROWTH
Volume 512, Issue -, Pages 69-73
Publisher
Elsevier BV
Online
2019-02-09
DOI
10.1016/j.jcrysgro.2019.02.018

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