An InGaN/GaN Superlattice to Enhance the Performance of Green LEDs: Exploring the Role of V-Pits

Reverse leakage current characteristics of InGaN/GaN multiple quantum well ultraviolet/blue/green light-emitting diodes

(2018) Shengjun Zhou et al.   JAPANESE JOURNAL OF APPLIED PHYSICS

Enhancement of carrier localization effect and internal quantum efficiency through In-rich InGaN quantum dots

(2018) Jianjie Liu et al.   SUPERLATTICES AND MICROSTRUCTURES

Study on the Coupling Mechanism of the Orthogonal Dipoles with Surface Plasmon in Green LED by Cathodoluminescence

(2018) Yulong Feng et al.   Nanomaterials

Effect of high-temperature/current stress on the forward tunneling current of InGaN/GaN high-power blue-light-emitting diodes

(2017) Sheng Liu et al.   JAPANESE JOURNAL OF APPLIED PHYSICS

Comparative study of GaN-based ultraviolet LEDs grown on different-sized patterned sapphire substrates with sputtered AlN nucleation layer

(2017) Shengjun Zhou et al.   JAPANESE JOURNAL OF APPLIED PHYSICS

Carrier localization in the vicinity of dislocations in InGaN

(2017) F. C-P. Massabuau et al.   JOURNAL OF APPLIED PHYSICS

Influences of graded superlattice on the electrostatic discharge characteristics of green InGaN/GaN light-emitting diodes

(2017) Kwanjae Lee et al.   JOURNAL OF CRYSTAL GROWTH

Numerical and experimental investigation of GaN-based flip-chip light-emitting diodes with highly reflective Ag/TiW and ITO/DBR Ohmic contacts

(2017) Shengjun Zhou et al.   OPTICS EXPRESS

Potential Barrier Formed Around Dislocations in InGaN Quantum Well Structures by Spot Cathodoluminescence Measurements

(2017) Satoshi Kurai et al.   PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS

Carrier localization in InGaN by composition fluctuations: implication to the “green gap”

(2017) Sergey Yu. Karpov   Photonics Research

Effects of GaN/AlGaN/Sputtered AlN nucleation layers on performance of GaN-based ultraviolet light-emitting diodes

(2017) Hongpo Hu et al.   Scientific Reports

Bridging the “green gap” of LEDs: giant light output enhancement and directional control of LEDs via embedded nano-void photonic crystals

(2016) Yu-Lin Tsai et al.   Nanoscale

Influences of Si-doped graded short-period superlattice on green InGaN/GaN light-emitting diodes

(2016) Kwanjae Lee et al.   OPTICS EXPRESS

Effect of V-pits embedded InGaN/GaN superlattices on optical and electrical properties of GaN-based green light-emitting diodes

(2016) Shengjun Zhou et al.   PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE

Efficiency Drop in GreenInGaN/GaNLight Emitting Diodes: The Role of Random Alloy Fluctuations

(2016) Matthias Auf der Maur et al.   PHYSICAL REVIEW LETTERS

Manipulation of nanoscale V-pits to optimize internal quantum efficiency of InGaN multiple quantum wells

(2015) Chiao-Yun Chang et al.   APPLIED PHYSICS LETTERS

Dislocation related droop in InGaN/GaN light emitting diodes investigated via cathodoluminescence

(2015) Galia Pozina et al.   APPLIED PHYSICS LETTERS

Highly efficient and reliable high power LEDs with patterned sapphire substrate and strip-shaped distributed current blocking layer

(2015) Shengjun Zhou et al.   APPLIED SURFACE SCIENCE

Hole injection from the sidewall of V-shaped pits into c-plane multiple quantum wells in InGaN light emitting diodes

(2015) Xiaoming Wu et al.   JOURNAL OF APPLIED PHYSICS

Carrier localization in In-rich InGaN/GaN multiple quantum wells for green light-emitting diodes

(2015) Hyun Jeong et al.   Scientific Reports

Deep hole injection assisted by large V-shape pits in InGaN/GaN multiple-quantum-wells blue light-emitting diodes

(2014)   JOURNAL OF APPLIED PHYSICS

Roles of V-shaped pits on the improvement of quantum efficiency in InGaN/GaN multiple quantum well light-emitting diodes

(2014)   JOURNAL OF APPLIED PHYSICS

Influence of V-pits on the efficiency droop in InGaN/GaN quantum wells

(2014) Jaekyun Kim et al.   OPTICS EXPRESS

Effect of V-Shaped Pit Size on the Reverse Leakage Current of InGaN/GaN Light-Emitting Diodes

(2013) Jaekyun Kim et al.   IEEE ELECTRON DEVICE LETTERS

High Internal Quantum Efficiency Blue-Green Light-Emitting Diode with Small Efficiency Droop Fabricated on Low Dislocation Density GaN Substrate

(2013) Tomotaka Sano et al.   JAPANESE JOURNAL OF APPLIED PHYSICS

Efficiency degradation behaviors of current/thermal co-stressed GaN-based blue light emitting diodes with vertical-structure

(2012) Lilin Liu et al.   JOURNAL OF APPLIED PHYSICS

Atomic scale characterization of GaInN/GaN multiple quantum wells in V-shaped pits

(2011) Shigetaka Tomiya et al.   APPLIED PHYSICS LETTERS

Transport-mechanism analysis of the reverse leakage current in GaInN light-emitting diodes

(2011) Qifeng Shan et al.   APPLIED PHYSICS LETTERS

Characteristics of efficiency droop in GaN-based light emitting diodes with an insertion layer between the multiple quantum wells and n-GaN layer

(2010) S. P. Chang et al.   APPLIED PHYSICS LETTERS

Characteristics of a GaN-Based Light-Emitting Diode With an Inserted p-GaN/i-InGaN Superlattice Structure

(2010) Yi-Jung Liu et al.   IEEE JOURNAL OF QUANTUM ELECTRONICS

Study on sapphire removal for thin-film LEDs fabrication using CMP and dry etching

(2009) Shengjun Zhou et al.   APPLIED SURFACE SCIENCE

Transient measurement of light-emitting diode characteristic parameters for production lines

(2009) Shengjun Zhou et al.   REVIEW OF SCIENTIFIC INSTRUMENTS

The effect of the low-mole InGaN structure and InGaN/GaN strained layer superlattices on optical performance of multiple quantum well active layers

(2008) Shi Jong Leem et al.   JOURNAL OF CRYSTAL GROWTH