Synaptic functions and a memristive mechanism on Pt/AlO x /HfO x /TiN bilayer-structure memristors

Nonvolatile Memory Materials for Neuromorphic Intelligent Machines

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Enhancement of resistive switching ratio induced by competing interfacial oxygen diffusion in tantalum oxide based memories with metal nitride electrode

(2018) Lei Hu et al.   APPLIED PHYSICS LETTERS

Ultra-low power Hf0.5Zr0.5O2 based ferroelectric tunnel junction synapses for hardware neural network applications

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Synaptic Plasticity and Learning Behaviors Mimicked in Single Inorganic Synapses of Pt/HfOx/ZnOx/TiN Memristive System

(2017) Lai-Guo Wang et al.   Nanoscale Research Letters

Bipolar Resistive Switching Characteristics of HfO2/TiO2/HfO2 Trilayer-Structure RRAM Devices on Pt and TiN-Coated Substrates Fabricated by Atomic Layer Deposition

(2017) Wei Zhang et al.   Nanoscale Research Letters

Synaptic Plasticity and Learning Behaviors Mimicked in Single Inorganic Synapses of Pt/HfOx/ZnOx/TiN Memristive System

(2017) Lai-Guo Wang et al.   Nanoscale Research Letters

Bipolar Resistive Switching Characteristics of HfO2/TiO2/HfO2 Trilayer-Structure RRAM Devices on Pt and TiN-Coated Substrates Fabricated by Atomic Layer Deposition

(2017) Wei Zhang et al.   Nanoscale Research Letters

Flexible Metal Oxide/Graphene Oxide Hybrid Neuromorphic Transistors on Flexible Conducting Graphene Substrates

(2016) Chang Jin Wan et al.   ADVANCED MATERIALS

Anomalous rectification in a purely electronic memristor

(2016) Jingrui Wang et al.   APPLIED PHYSICS LETTERS

Multi-step resistive switching behavior of Li-doped ZnO resistance random access memory device controlled by compliance current

(2016) Chun-Cheng Lin et al.   JOURNAL OF APPLIED PHYSICS

Memristors with diffusive dynamics as synaptic emulators for neuromorphic computing

(2016) Zhongrui Wang et al.   NATURE MATERIALS

Geometric conductive filament confinement by nanotips for resistive switching of HfO2-RRAM devices with high performance

(2016) Gang Niu et al.   Scientific Reports

Interplay of multiple synaptic plasticity features in filamentary memristive devices for neuromorphic computing

(2016) Selina La Barbera et al.   Scientific Reports

Encoding, training and retrieval in ferroelectric tunnel junctions

(2016) Hanni Xu et al.   Scientific Reports

A magnetic synapse: multilevel spin-torque memristor with perpendicular anisotropy

(2016) Steven Lequeux et al.   Scientific Reports

Biorealistic Implementation of Synaptic Functions with Oxide Memristors through Internal Ionic Dynamics

(2015) Chao Du et al.   ADVANCED FUNCTIONAL MATERIALS

Energy-Efficient Artificial Synapses Based on Flexible IGZO Electric-Double-Layer Transistors

(2015) Jumei Zhou et al.   IEEE ELECTRON DEVICE LETTERS

Al 2 O 3 /HfO 2 functional stack films based resistive switching memories with controlled SET and RESET voltages

(2015) Lin Chen et al.   SOLID STATE IONICS

Flexible Sensory Platform Based on Oxide-based Neuromorphic Transistors

(2015) Ning Liu et al.   Scientific Reports

Excellent resistive switching properties of atomic layer-deposited Al2O3/HfO2/Al2O3 trilayer structures for non-volatile memory applications

(2015) Lai-Guo Wang et al.   Nanoscale Research Letters

A double barrier memristive device

(2015) M. Hansen et al.   Scientific Reports

Ultra-Low-Energy Three-Dimensional Oxide-Based Electronic Synapses for Implementation of Robust High-Accuracy Neuromorphic Computation Systems

(2014) Bin Gao et al.   ACS Nano

Switching mechanism of double forming process phenomenon in ZrOx/HfOy bilayer resistive switching memory structure with large endurance

(2014) Chun-Yang Huang et al.   APPLIED PHYSICS LETTERS

Recent progress in resistive random access memories: Materials, switching mechanisms, and performance

(2014) F. Pan et al.   MATERIALS SCIENCE & ENGINEERING R-REPORTS

Three-state resistive switching in HfO2-based RRAM

(2014) Xiaojuan Lian et al.   SOLID-STATE ELECTRONICS

Photobias Instability of High Performance Solution Processed Amorphous Zinc Tin Oxide Transistors

(2013) Yoon Jang Kim et al.   ACS Applied Materials & Interfaces

Quantum-size effects in hafnium-oxide resistive switching

(2013) Shibing Long et al.   APPLIED PHYSICS LETTERS

In situ observation of filamentary conducting channels in an asymmetric Ta2O5−x/TaO2−x bilayer structure

(2013) Gyeong-Su Park et al.   Nature Communications

Voltage and Power-Controlled Regimes in the Progressive Unipolar RESET Transition of HfO2-Based RRAM

(2013) Shibing Long et al.   Scientific Reports

On-Demand Nanodevice with Electrical and Neuromorphic Multifunction Realized by Local Ion Migration

(2012) Rui Yang et al.   ACS Nano

Synaptic Learning and Memory Functions Achieved Using Oxygen Ion Migration/Diffusion in an Amorphous InGaZnO Memristor

(2012) Zhong Qiang Wang et al.   ADVANCED FUNCTIONAL MATERIALS

Flexible metal-oxide devices made by room-temperature photochemical activation of sol–gel films

(2012) Yong-Hoon Kim et al.   NATURE

A ferroelectric memristor

(2012) André Chanthbouala et al.   NATURE MATERIALS

Short-Term Memory to Long-Term Memory Transition in a Nanoscale Memristor

(2011) Ting Chang et al.   ACS Nano

Approaches for improving the performance of filament-type resistive switching memory

(2011) WenTai Lian et al.   CHINESE SCIENCE BULLETIN

An Electronic Synapse Device Based on Metal Oxide Resistive Switching Memory for Neuromorphic Computation

(2011) Shimeng Yu et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

Nanoelectronic Programmable Synapses Based on Phase Change Materials for Brain-Inspired Computing

(2011) Duygu Kuzum et al.   NANO LETTERS

Nanoscale Memristor Device as Synapse in Neuromorphic Systems

(2010) Sung Hyun Jo et al.   NANO LETTERS

An Organic Nanoparticle Transistor Behaving as a Biological Spiking Synapse

(2009) Fabien Alibart et al.   ADVANCED FUNCTIONAL MATERIALS

Redox-Based Resistive Switching Memories - Nanoionic Mechanisms, Prospects, and Challenges

(2009) Rainer Waser et al.   ADVANCED MATERIALS

The missing memristor found

(2008) Dmitri B. Strukov et al.   NATURE

Memristive switching mechanism for metal/oxide/metal nanodevices

(2008) J. Joshua Yang et al.   Nature Nanotechnology