Multi-step resistive switching behavior of Li-doped ZnO resistance random access memory device controlled by compliance current

Multi-bit nonvolatile logic implemented with metal-oxide based resistive switching device

(2015) Bin Gao et al.   SOLID STATE COMMUNICATIONS

Enhanced Electrochemical Performance with Surface Coating by Reactive Magnetron Sputtering on Lithium-Rich Layered Oxide Electrodes

(2014) Bao Qiu et al.   ACS Applied Materials & Interfaces

Dual Ion Effect of the Lithium Silicate Resistance Random Access Memory

(2014) Kuan-Chang Chang et al.   IEEE ELECTRON DEVICE LETTERS

Resistive Switching Modification by Ultraviolet Illumination in Transparent Electrode Resistive Random Access Memory

(2014)   IEEE ELECTRON DEVICE LETTERS

Multilevel unipolar resistive switching with negative differential resistance effect in Ag/SiO2/Pt device

(2014) Haitao Sun et al.   JOURNAL OF APPLIED PHYSICS

Revealing Controllable Nanowire Transformation through Cationic Exchange for RRAM Application

(2014) Chun-Wei Huang et al.   NANO LETTERS

Nanoporous Silicon Oxide Memory

(2014) Gunuk Wang et al.   NANO LETTERS

In Situ TEM and Energy Dispersion Spectrometer Analysis of Chemical Composition Change in ZnO Nanowire Resistive Memories

(2013) Yu-Ting Huang et al.   ANALYTICAL CHEMISTRY

Demonstration and modeling of multi-bit resistance random access memory

(2013) Xiang Yang et al.   APPLIED PHYSICS LETTERS

Characteristics of hafnium oxide resistance random access memory with different setting compliance current

(2013) Yu-Ting Su et al.   APPLIED PHYSICS LETTERS

Study of conduction and switching mechanisms in Al/AlOx/WOx/W resistive switching memory for multilevel applications

(2013) Ye Zhang et al.   APPLIED PHYSICS LETTERS

Multilevel Switching in Forming-Free Resistive Memory Devices With Atomic Layer Deposited ${\rm HfTiO}_{x}$ Nanolaminate

(2013) Bhaswar Chakrabarti et al.   IEEE ELECTRON DEVICE LETTERS

A Novel Defect-Engineering-Based Implementation for High-Performance Multilevel Data Storage in Resistive Switching Memory

(2013) Bin Gao et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

Sensorless battery temperature measurements based on electrochemical impedance spectroscopy

(2013) L.H.J. Raijmakers et al.   JOURNAL OF POWER SOURCES

Dynamic Evolution of Conducting Nanofilament in Resistive Switching Memories

(2013) Jui-Yuan Chen et al.   NANO LETTERS

Improved Resistive Switching Characteristics by Al2O3 Layers Inclusion in HfO2-Based RRAM Devices

(2013) C.-Y. Huang et al.   ECS Solid State Letters

Effect of composition and microstructure on electrical properties and CO2 stability of donor-doped, proton conducting BaCe1−(x+y)ZrxNbyO3

(2013) Colin M. Gore et al.   Journal of Materials Chemistry A

Unipolar resistive switching behavior of Pt/LixZn1−xO/Pt resistive random access memory devices controlled by various defect types

(2012) Chun-Cheng Lin et al.   APPLIED PHYSICS LETTERS

Origin of Hopping Conduction in Sn-Doped Silicon Oxide RRAM With Supercritical $\hbox{CO}_{2}$ Fluid Treatment

(2012) Tsung-Ming Tsai et al.   IEEE ELECTRON DEVICE LETTERS

Anodic $\hbox{Nb}_{2}\hbox{O}_{5}$ Nonvolatile RRAM

(2012) T. V. Kundozerova et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

Resistive switching of Au/ZnO/Au resistive memory: an in situ observation of conductive bridge formation

(2012) Chung-Nan Peng et al.   Nanoscale Research Letters

A Parallel Circuit Model for Multi-State Resistive-Switching Random Access Memory

(2011) Albert B. K. Chen et al.   ADVANCED FUNCTIONAL MATERIALS

New Set/Reset Scheme for Excellent Uniformity in Bipolar Resistive Memory

(2011) Jubong Park et al.   IEEE ELECTRON DEVICE LETTERS

Multibit Operation of $\hbox{TiO}_{x}$ -Based ReRAM by Schottky Barrier Height Engineering

(2011) Jubong Park et al.   IEEE ELECTRON DEVICE LETTERS

Impact of Temperature on the Resistive Switching Behavior of Embedded $\hbox{HfO}_{2}$-Based RRAM Devices

(2011) Christian Walczyk et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

All-ZnO-based transparent resistance random access memory device fully fabricated at room temperature

(2011) Xun Cao et al.   JOURNAL OF PHYSICS D-APPLIED PHYSICS

Nanoscale resistive memory with intrinsic diode characteristics and long endurance

(2010) Kuk-Hwan Kim et al.   APPLIED PHYSICS LETTERS

Electrode dependence of resistive switching in Mn-doped ZnO: Filamentary versus interfacial mechanisms

(2010) H. Y. Peng et al.   APPLIED PHYSICS LETTERS

Characterization of high-power lithium-ion batteries by electrochemical impedance spectroscopy. II: Modelling

(2010) D. Andre et al.   JOURNAL OF POWER SOURCES

Constant-Phase-Element Behavior Caused by Resistivity Distributions in Films

(2010) Bryan Hirschorn et al.   JOURNAL OF THE ELECTROCHEMICAL SOCIETY

Studies on nonvolatile resistance memory switching in ZnO thin films

(2009) L. M. Kukreja et al.   BULLETIN OF MATERIALS SCIENCE

Resistive Switching Characteristics of Sol–Gel Zinc Oxide Films for Flexible Memory Applications

(2009) Sungho Kim et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

Unipolar resistive switching characteristics of ZnO thin films for nonvolatile memory applications

(2008) Wen-Yuan Chang et al.   APPLIED PHYSICS LETTERS

Characteristics and mechanism of conduction/set process in TiN∕ZnO∕Pt resistance switching random-access memories

(2008) Nuo Xu et al.   APPLIED PHYSICS LETTERS

Nonpolar resistance switching of metal/binary-transition-metal oxides/metal sandwiches: Homogeneous/inhomogeneous transition of current distribution

(2008) I. H. Inoue et al.   PHYSICAL REVIEW B