Multilevel HfO2-based RRAM devices for low-power neuromorphic networks

Neuro-Inspired Computing With Emerging Nonvolatile Memorys

(2018) Shimeng Yu   PROCEEDINGS OF THE IEEE

Efficient and self-adaptive in-situ learning in multilayer memristor neural networks

(2018) Can Li et al.   Nature Communications

Impact of oxide and electrode materials on the switching characteristics of oxide ReRAM devices

(2018) Elia Ambrosi et al.   FARADAY DISCUSSIONS

Impact of the precursor chemistry and process conditions on the cell-to-cell variability in 1T-1R based HfO2 RRAM devices

(2018) Alessandro Grossi et al.   Scientific Reports

Reduction of the Cell-to-Cell Variability in Hf1-xAlxOyBased RRAM Arrays by Using Program Algorithms

(2017) E. Perez et al.   IEEE ELECTRON DEVICE LETTERS

Face classification using electronic synapses

(2017) Peng Yao et al.   Nature Communications

Analytical Modeling of Current Overshoot in Oxide-Based Resistive Switching Memory (RRAM)

(2016) Stefano Ambrogio et al.   IEEE ELECTRON DEVICE LETTERS

Mastering the game of Go with deep neural networks and tree search

(2016) David Silver et al.   NATURE

Resistive switching memories based on metal oxides: mechanisms, reliability and scaling

(2016) Daniele Ielmini   SEMICONDUCTOR SCIENCE AND TECHNOLOGY

Acceleration of Deep Neural Network Training with Resistive Cross-Point Devices: Design Considerations

(2016) Tayfun Gokmen et al.   Frontiers in Neuroscience

Multilevel-Cell Phase-Change Memory: A Viable Technology

(2016) Aravinthan Athmanathan et al.   IEEE Journal on Emerging and Selected Topics in Circuits and Systems

Demonstration of Low Power 3-bit Multilevel Cell Characteristics in a TaOx-Based RRAM by Stack Engineering

(2015) Amit Prakash et al.   IEEE ELECTRON DEVICE LETTERS

Training and operation of an integrated neuromorphic network based on metal-oxide memristors

(2015) M. Prezioso et al.   NATURE

Deep learning

(2015) Yann LeCun et al.   NATURE

Memory leads the way to better computing

(2015) H.-S. Philip Wong et al.   Nature Nanotechnology

Statistical Fluctuations in HfOx Resistive-Switching Memory: Part I - Set/Reset Variability

(2014) Stefano Ambrogio et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

Set Variability and Failure Induced by Complementary Switching in Bipolar RRAM

(2013) Simone Balatti et al.   IEEE ELECTRON DEVICE LETTERS

Endurance/Retention Trade-off on $\hbox{HfO}_{2}/\hbox{Metal}$ Cap 1T1R Bipolar RRAM

(2013) Yang Yin Chen et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

Grain boundaries as preferential sites for resistive switching in the HfO2 resistive random access memory structures

(2012) M. Lanza et al.   APPLIED PHYSICS LETTERS

Investigating the switching dynamics and multilevel capability of bipolar metal oxide resistive switching memory

(2011) Shimeng Yu et al.   APPLIED PHYSICS LETTERS

Modeling the Universal Set/Reset Characteristics of Bipolar RRAM by Field- and Temperature-Driven Filament Growth

(2011) Daniele Ielmini   IEEE TRANSACTIONS ON ELECTRON DEVICES

Metal oxide resistive memory switching mechanism based on conductive filament properties

(2011) G. Bersuker et al.   JOURNAL OF APPLIED PHYSICS