On the hole accelerator for III-nitride light-emitting diodes

Improvement of carrier injection symmetry and quantum efficiency in InGaN light-emitting diodes with Mg delta-doped barriers

(2015) F. Zhang et al.   APPLIED PHYSICS LETTERS

A hole modulator for InGaN/GaN light-emitting diodes

(2015) Zi-Hui Zhang et al.   APPLIED PHYSICS LETTERS

A hole accelerator for InGaN/GaN light-emitting diodes

(2014) Zi-Hui Zhang et al.   APPLIED PHYSICS LETTERS

Simultaneous enhancement of electron overflow reduction and hole injection promotion by tailoring the last quantum barrier in InGaN/GaN light-emitting diodes

(2014) Zabu Kyaw et al.   APPLIED PHYSICS LETTERS

Remarkably reduced efficiency droop by using staircase thin InGaN quantum barriers in InGaN based blue light emitting diodes

(2014) Kun Zhou et al.   APPLIED PHYSICS LETTERS

On the origin of the electron blocking effect by an n-type AlGaN electron blocking layer

(2014) Zi-Hui Zhang et al.   APPLIED PHYSICS LETTERS

Improving hole injection efficiency by manipulating the hole transport mechanism through p-type electron blocking layer engineering

(2014) Zi-Hui Zhang et al.   OPTICS LETTERS

p-doping-free InGaN/GaN light-emitting diode driven by three-dimensional hole gas

(2013) Zi-Hui Zhang et al.   APPLIED PHYSICS LETTERS

Influence of n-type versus p-type AlGaN electron-blocking layer on InGaN/GaN multiple quantum wells light-emitting diodes

(2013) Yun Ji et al.   APPLIED PHYSICS LETTERS

Enhanced overall efficiency of GaInN-based light-emitting diodes with reduced efficiency droop by Al-composition-graded AlGaN/GaN superlattice electron blocking layer

(2013) Jun Hyuk Park et al.   APPLIED PHYSICS LETTERS

Improved hole distribution in InGaN/GaN light-emitting diodes with graded thickness quantum barriers

(2013) Z. G. Ju et al.   APPLIED PHYSICS LETTERS

Efficiency droop in InGaN/GaN blue light-emitting diodes: Physical mechanisms and remedies

(2013) Giovanni Verzellesi et al.   JOURNAL OF APPLIED PHYSICS

PN-type quantum barrier for InGaN/GaN light emitting diodes

(2013) Zi-Hui Zhang et al.   OPTICS EXPRESS

Improved InGaN/GaN light-emitting diodes with a p-GaN/n-GaN/p-GaN/n-GaN/p-GaN current-spreading layer

(2013) Zi-Hui Zhang et al.   OPTICS EXPRESS

Enhanced hole transport in InGaN/GaN multiple quantum well light-emitting diodes with a p-type doped quantum barrier

(2013) Yun Ji et al.   OPTICS LETTERS

p-InGaN/AlGaN electron blocking layer for InGaN/GaN blue light-emitting diodes

(2012) Zhiqiang Liu et al.   APPLIED PHYSICS LETTERS

Inserting a p-InGaN layer before the p-AlGaN electron blocking layer suppresses efficiency droop in InGaN-based light-emitting diodes

(2012) Ray-Ming Lin et al.   APPLIED PHYSICS LETTERS

Advantages of GaN based light-emitting diodes with a p-InGaN hole reservoir layer

(2012) Taiping Lu et al.   APPLIED PHYSICS LETTERS

Performance enhancement of blue light-emitting diodes with a special designed AlGaN/GaN superlattice electron-blocking layer

(2011) Yun Yan Zhang et al.   APPLIED PHYSICS LETTERS

Improvement in Electron Overflow of Near-Ultraviolet InGaN LEDs by Specific Design on Last Barrier

(2011) Yen-Kuang Kuo et al.   IEEE PHOTONICS TECHNOLOGY LETTERS

Improvement of GaN-based light-emitting diodes using p-type AlGaN/GaN superlattices with a graded Al composition

(2011) Sang-Jun Lee et al.   JOURNAL OF PHYSICS D-APPLIED PHYSICS

Effect of current spreading on the efficiency droop of InGaN light-emitting diodes

(2011) Han-Youl Ryu et al.   OPTICS EXPRESS

Effect of Mg doping in the barrier of InGaN/GaN multiple quantum well on optical power of light-emitting diodes

(2010) Sang-Heon Han et al.   APPLIED PHYSICS LETTERS

Three-dimensional hole gas induced by polarization in (0001)-oriented metal-face III-nitride structure

(2010) L. Zhang et al.   APPLIED PHYSICS LETTERS

Efficiency droop alleviation in InGaN/GaN light-emitting diodes by graded-thickness multiple quantum wells

(2010) C. H. Wang et al.   APPLIED PHYSICS LETTERS

Efficiency droop in nitride-based light-emitting diodes

(2010) Joachim Piprek   PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE

Polarization-Induced Hole Doping in Wide-Band-Gap Uniaxial Semiconductor Heterostructures

(2010) J. Simon et al.   SCIENCE

Effect of electron blocking layer on efficiency droop in InGaN/GaN multiple quantum well light-emitting diodes

(2009) Sang-Heon Han et al.   APPLIED PHYSICS LETTERS

Effect of N-Type AlGaN Layer on Carrier Transportation and Efficiency Droop of Blue InGaN Light-Emitting Diodes

(2009) Sheng-Horng Yen et al.   IEEE PHOTONICS TECHNOLOGY LETTERS

Reduction of efficiency droop in InGaN light emitting diodes by coupled quantum wells

(2008) Xianfeng Ni et al.   APPLIED PHYSICS LETTERS