A hole accelerator for InGaN/GaN light-emitting diodes

Polarization self-screening in [0001] oriented InGaN/GaN light-emitting diodes for improving the electron injection efficiency

(2014) Zi-Hui Zhang et al.   APPLIED PHYSICS LETTERS

Origin of InGaN/GaN light-emitting diode efficiency improvements using tunnel-junction-cascaded active regions

(2014) Joachim Piprek   APPLIED PHYSICS LETTERS

On the origin of the electron blocking effect by an n-type AlGaN electron blocking layer

(2014) Zi-Hui Zhang et al.   APPLIED PHYSICS LETTERS

InGaN/GaN multiple-quantum-well light-emitting diodes with a grading InN composition suppressing the Auger recombination

(2014) Zi-Hui Zhang et al.   APPLIED PHYSICS LETTERS

On the mechanisms of InGaN electron cooler in InGaN/GaN light-emitting diodes

(2014) Zi-Hui Zhang et al.   OPTICS EXPRESS

Improving hole injection efficiency by manipulating the hole transport mechanism through p-type electron blocking layer engineering

(2014) Zi-Hui Zhang et al.   OPTICS LETTERS

The role of polarization fields in Auger-induced efficiency droop in nitride-based light-emitting diodes

(2013) Roman Vaxenburg et al.   APPLIED PHYSICS LETTERS

Improved hole distribution in InGaN/GaN light-emitting diodes with graded thickness quantum barriers

(2013) Z. G. Ju et al.   APPLIED PHYSICS LETTERS

Enhanced hole transport in InGaN/GaN multiple quantum well light-emitting diodes with a p-type doped quantum barrier

(2013) Yun Ji et al.   OPTICS LETTERS

Direct Measurement of Auger Electrons Emitted from a Semiconductor Light-Emitting Diode under Electrical Injection: Identification of the Dominant Mechanism for Efficiency Droop

(2013) Justin Iveland et al.   PHYSICAL REVIEW LETTERS

Efficiency-Droop Suppression by Using Large-Bandgap AlGaInN Thin Barrier Layers in InGaN Quantum-Well Light-Emitting Diodes

(2013) Guangyu Liu et al.   IEEE Photonics Journal

III-Nitride Photonics

(2012) Nelson Tansu et al.   IEEE Photonics Journal

Advances in the LED Materials and Architectures for Energy-Saving Solid-State Lighting Toward “Lighting Revolution”

(2012) S. T. Tan et al.   IEEE Photonics Journal

Improvement of peak quantum efficiency and efficiency droop in III-nitride visible light-emitting diodes with an InAlN electron-blocking layer

(2010) Suk Choi et al.   APPLIED PHYSICS LETTERS

Numerical Study of Blue InGaN Light-Emitting Diodes With Varied Barrier Thicknesses

(2010) Miao-Chan Tsai et al.   IEEE PHOTONICS TECHNOLOGY LETTERS

Size-dependent light output, spectral shift, and self-heating of 400 nm InGaN light-emitting diodes

(2010) Zheng Gong et al.   JOURNAL OF APPLIED PHYSICS

Efficiency droop in nitride-based light-emitting diodes

(2010) Joachim Piprek   PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE