Solution-processed lithium-doped zinc oxide thin-film transistors at low temperatures between 100 and 300 °C
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Title
Solution-processed lithium-doped zinc oxide thin-film transistors at low temperatures between 100 and 300 °C
Authors
Keywords
Oxygen Vacancy, LiOH, Electrical Performance, Nitrogen Condition, Zinc Hydroxide
Journal
APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING
Volume 122, Issue 4, Pages -
Publisher
Springer Nature
Online
2016-03-07
DOI
10.1007/s00339-016-9903-3
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