Journal
CHEMISTRY OF MATERIALS
Volume 24, Issue 18, Pages 3517-3524Publisher
AMER CHEMICAL SOC
DOI: 10.1021/cm2036234
Keywords
thin-film transistor; zinc oxide; nanoparticle/precursor ink; low-temperature process
Funding
- cooperative RD program
- Korea Research Council for Industrial Science and Technology (Republic of Korea)
- Converging Research Center Program through the Ministry of Education, Science and Technology [2011K000611]
- National Research Council of Science & Technology (NST), Republic of Korea [B551179-09-06-00] Funding Source: Korea Institute of Science & Technology Information (KISTI), National Science & Technology Information Service (NTIS)
- National Research Foundation of Korea [2010-50171] Funding Source: Korea Institute of Science & Technology Information (KISTI), National Science & Technology Information Service (NTIS)
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Novel zinc oxide (ZnO) inks via mixing a soluble aqueous ZnO precursor with ZnO nanoparticles suitable for low temperature processing of the thin film transistors (TFTs) were prepared. ZnO TFTs produced from the proposed ZnO mixture ink exhibited significantly enhanced field effect mobility of 1.75 cm(2) V-1 s(-1) and an on/off ratio of 5.89 x 10(8) even at low processing temperature of 250 degrees C. Various structural analyses were performed to investigate the influence of ZnO nanoparticles inclusion into the thin film nanostructure on the structural, chemical, and electrical characteristics of the ZnO TFTs.
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