Solution-processed lithium-doped zinc oxide thin-film transistors at low temperatures between 100 and 300 °C

Crystal-Domain Orientation and Boundary in Highly Ordered Organic Semiconductor Thin Film

(2015) Chuan Qian et al.   Journal of Physical Chemistry C

Ion-dependent gate dielectric characteristics of ion-conducting SiO2 solid-electrolytes in oxide field-effect transistors

(2014) Jia Sun et al.   PHYSICAL CHEMISTRY CHEMICAL PHYSICS

Solution-Processed LiF-Doped ZnO Films for High Performance Low Temperature Field Effect Transistors and Inverted Solar Cells

(2013) Jingjing Chang et al.   ACS Applied Materials & Interfaces

High-Performance ZnO Transistors Processed Via an Aqueous Carbon-Free Metal Oxide Precursor Route at Temperatures Between 80-180 °C

(2013) Yen-Hung Lin et al.   ADVANCED MATERIALS

“Green” electronics: biodegradable and biocompatible materials and devices for sustainable future

(2013) Mihai Irimia-Vladu   CHEMICAL SOCIETY REVIEWS

High Performance, Low Temperature Solution-Processed Barium and Strontium Doped Oxide Thin Film Transistors

(2013) Kulbinder K. Banger et al.   CHEMISTRY OF MATERIALS

One decade of fully transparent oxide thin-film transistors: fabrication, performance and stability

(2013) Heiko Frenzel et al.   Physica Status Solidi-Rapid Research Letters

Metal salt-derived In–Ga–Zn–O semiconductors incorporating formamide as a novel co-solvent for producing solution-processed, electrohydrodynamic-jet printed, high performance oxide transistors

(2013) Sunho Jeong et al.   Journal of Materials Chemistry C

Low-Temperature, Solution-Processed and Alkali Metal Doped ZnO for High-Performance Thin-Film Transistors

(2012) Si Yun Park et al.   ADVANCED MATERIALS

“Cut and Stick” Rubbery Ion Gels as High Capacitance Gate Dielectrics

(2012) Keun Hyung Lee et al.   ADVANCED MATERIALS

Novel Zinc Oxide Inks with Zinc Oxide Nanoparticles for Low-Temperature, Solution-Processed Thin-Film Transistors

(2012) Song Yun Cho et al.   CHEMISTRY OF MATERIALS

Flexible metal-oxide devices made by room-temperature photochemical activation of sol–gel films

(2012) Yong-Hoon Kim et al.   NATURE

The structural, optical and electrical characterization of high-performance, low-temperature and solution-processed alkali metal-doped ZnO TFTs

(2012) Si Yun Park et al.   Journal of Materials Chemistry C

Patterning of Flexible Transparent Thin-Film Transistors with Solution-Processed ZnO Using the Binary Solvent Mixture

(2011) Kyongjun Kim et al.   ADVANCED FUNCTIONAL MATERIALS

Solution-processable tin-doped indium oxide with a versatile patternability for transparent oxide thin film transistors

(2011) Keunkyu Song et al.   JOURNAL OF MATERIALS CHEMISTRY

Low-temperature, solution-processed metal oxide thin film transistors

(2011) Sunho Jeong et al.   JOURNAL OF MATERIALS CHEMISTRY

Low-temperature fabrication of high-performance metal oxide thin-film electronics via combustion processing

(2011) Myung-Gil Kim et al.   NATURE MATERIALS

High-mobility low-temperature ZnO transistors with low-voltage operation

(2010) Hyojin Bong et al.   APPLIED PHYSICS LETTERS

Atomic Layer Deposition ZnO:N Thin Film Transistor: The Effects of N Concentration on the Device Properties

(2010) S. J. Lim et al.   JOURNAL OF THE ELECTROCHEMICAL SOCIETY

Low-temperature, high-performance solution-processed metal oxide thin-film transistors formed by a ‘sol–gel on chip’ process

(2010) K. K. Banger et al.   NATURE MATERIALS

Role of Gallium Doping in Dramatically Lowering Amorphous-Oxide Processing Temperatures for Solution-Derived Indium Zinc Oxide Thin-Film Transistors

(2009) Sunho Jeong et al.   ADVANCED MATERIALS

Photosensitivity of solution-based indium gallium zinc oxide single-walled carbon nanotubes blend thin film transistors

(2009) Keun Woo Lee et al.   APPLIED PHYSICS LETTERS

High performance solution-processed amorphous zinc tin oxide thin film transistor

(2009) Seok-Jun Seo et al.   JOURNAL OF PHYSICS D-APPLIED PHYSICS

Solution-Processed Zinc Tin Oxide Semiconductor for Thin-Film Transistors

(2008) Sunho Jeong et al.   Journal of Physical Chemistry C