Al2O3/AlN/GaN MOS-Channel-HEMTs With an AlN Interfacial Layer

Published 2014 View Full Article

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Title
Al2O3/AlN/GaN MOS-Channel-HEMTs With an AlN Interfacial Layer
Authors
Keywords
-
Journal
IEEE ELECTRON DEVICE LETTERS
Volume 35, Issue 7, Pages 723-725
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Online
2014-05-30
DOI
10.1109/led.2014.2322379

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