Fabrication and Characterization of Enhancement-Mode High-$\kappa~{\rm LaLuO}_{3}$-AlGaN/GaN MIS-HEMTs
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Title
Fabrication and Characterization of Enhancement-Mode High-$\kappa~{\rm LaLuO}_{3}$-AlGaN/GaN MIS-HEMTs
Authors
Keywords
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Journal
IEEE TRANSACTIONS ON ELECTRON DEVICES
Volume 60, Issue 10, Pages 3040-3046
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Online
2013-08-24
DOI
10.1109/ted.2013.2277559
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- AlGaN/GaN MISHEMTs With High-$\kappa \ \hbox{LaLuO}_{3}$ Gate Dielectric
- (2012) Shu Yang et al. IEEE ELECTRON DEVICE LETTERS
- Effective Passivation of AlGaN/GaN HEMTs by ALD-Grown AlN Thin Film
- (2012) Sen Huang et al. IEEE ELECTRON DEVICE LETTERS
- Characterization of high-κ LaLuO3 thin film grown on AlGaN/GaN heterostructure by molecular beam deposition
- (2011) Shu Yang et al. APPLIED PHYSICS LETTERS
- Impact of ultrathin Al2O3 diffusion barriers on defects in high-k LaLuO3 on Si
- (2011) S. Shen et al. APPLIED PHYSICS LETTERS
- Impact of ultrathin Al2O3 barrier layer on electrical properties of LaLuO3 metal-oxide-semiconductor devices
- (2011) Yiqun Liu et al. APPLIED PHYSICS LETTERS
- Fabrication of Enhancement-Mode AlGaN/GaN MISHEMTs by Using Fluorinated $ \hbox{Al}_{2}\hbox{O}_{3}$ as Gate Dielectrics
- (2011) Chao Chen et al. IEEE ELECTRON DEVICE LETTERS
- Integration of $\hbox{LaLuO}_{3} \ (\kappa \sim \hbox{30})$ as High-$\kappa$ Dielectric on Strained and Unstrained SOI MOSFETs With a Replacement Gate Process
- (2010) E. Durgun Ozben et al. IEEE ELECTRON DEVICE LETTERS
- Low Hysteresis Dispersion La[sub 2]O[sub 3] AlGaN∕GaN MOS-HEMTs
- (2010) Hsien-Chin Chiu et al. JOURNAL OF THE ELECTROCHEMICAL SOCIETY
- Enhancement-mode AlGaN/GaN HEMT and MIS-HEMT technology
- (2010) Kevin J. Chen et al. PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE
- GaN Power Transistors on Si Substrates for Switching Applications
- (2010) Nariaki Ikeda et al. PROCEEDINGS OF THE IEEE
- AlGaN/GaN Recessed MIS-Gate HFET With High-Threshold-Voltage Normally-Off Operation for Power Electronics Applications
- (2008) Tohru Oka et al. IEEE ELECTRON DEVICE LETTERS
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- (2008) U.K. Mishra et al. PROCEEDINGS OF THE IEEE
- Characterization of lanthanum lutetium oxide thin films grown by atomic layer deposition as an alternative gate dielectric
- (2008) M. Roeckerath et al. THIN SOLID FILMS
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