Electromechanical Fields and Their Influence on the Internal Quantum Efficiency of GaN-Based Light-Emitting Diodes

Degradation effect of Auger recombination and built-in polarization field on GaN-based light-emitting diodes

(2018) Muhammad Usman et al.   AIP Advances

Measurement of piezoelectric field in single- and double-quantum-well green LEDs using electroreflectance spectroscopy

(2014) Muhammad Usman et al.   JAPANESE JOURNAL OF APPLIED PHYSICS

An Explanation of Efficiency Droop in InGaN-based Light Emitting Diodes: Saturated Radiative Recombination Rate at Randomly Distributed In-Rich Active Areas

(2011) Jong-In Shim et al.   JOURNAL OF THE KOREAN PHYSICAL SOCIETY

Low efficiency droop in blue-green m-plane InGaN/GaN light emitting diodes

(2010) Shih-Chun Ling et al.   APPLIED PHYSICS LETTERS

Droop in InGaN light-emitting diodes: A differential carrier lifetime analysis

(2010) Aurélien David et al.   APPLIED PHYSICS LETTERS

Density-activated defect recombination as a possible explanation for the efficiency droop in GaN-based diodes

(2010) J. Hader et al.   APPLIED PHYSICS LETTERS

Efficiency droop in nitride-based light-emitting diodes

(2010) Joachim Piprek   PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE

GaN-Based Light-Emitting Diodes: Efficiency at High Injection Levels

(2010) Ümit Ozgur et al.   PROCEEDINGS OF THE IEEE

Rate equation analysis of efficiency droop in InGaN light-emitting diodes

(2009) Han-Youl Ryu et al.   APPLIED PHYSICS LETTERS

A combined electro-optical method for the determination of the recombination parameters in InGaN-based light-emitting diodes

(2009) Matteo Meneghini et al.   JOURNAL OF APPLIED PHYSICS

On the origin of efficiency roll-off in InGaN-based light-emitting diodes

(2008) X. A. Cao et al.   JOURNAL OF APPLIED PHYSICS