Journal
PHYSICAL REVIEW B
Volume 90, Issue 23, Pages -Publisher
AMER PHYSICAL SOC
DOI: 10.1103/PhysRevB.90.235203
Keywords
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Funding
- National Science Foundation [DMR-1410125]
- Thomas F. and Kate Miller Jeffress Memorial Trust
- Division Of Materials Research
- Direct For Mathematical & Physical Scien [1410125] Funding Source: National Science Foundation
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In high-purity GaN grown by hydride vapor phase epitaxy, the commonly observed yellow luminescence (YL) band gives way to a green luminescence (GL) band at high excitation intensity. We propose that the GL band with a maximum at 2.4 eV is caused by transitions of electrons from the conduction band to the 0/+ level of the isolated C-N defect. The YL band, related to transitions via the -/0 level of the same defect, has a maximum at 2.1 eV and can be observed only for some high-purity samples. However, in less pure GaN samples, where no GL band is observed, another YL band with a maximum at 2.2 eV dominates the photoluminescence spectrum. The latter is attributed to the CNON complex.
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