Impact of electrically formed interfacial layer and improved memory characteristics of IrOx/high-κx/W structures containing AlOx, GdOx, HfOx, and TaOx switching materials
出版年份 2013 全文链接
标题
Impact of electrically formed interfacial layer and improved memory characteristics of IrOx/high-κx/W structures containing AlOx, GdOx, HfOx, and TaOx switching materials
作者
关键词
Resistive switching, W/TaO<sub>x</sub>, Ti nanolayer, Oxygen ion migration, Nanofilament
出版物
Nanoscale Research Letters
Volume 8, Issue 1, Pages 379
出版商
Springer Nature
发表日期
2013-09-06
DOI
10.1186/1556-276x-8-379
参考文献
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