Resistive switching dependence on atomic layer deposition parameters in HfO2-based memory devices
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Title
Resistive switching dependence on atomic layer deposition parameters in HfO2-based memory devices
Authors
Keywords
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Journal
Journal of Materials Chemistry C
Volume 2, Issue 17, Pages 3204-3211
Publisher
Royal Society of Chemistry (RSC)
Online
2013-11-13
DOI
10.1039/c3tc31819b
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