Highly Reliable Polysilsesquioxane Passivation Layer fora-InGaZnO Thin-Film Transistors
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Title
Highly Reliable Polysilsesquioxane Passivation Layer fora-InGaZnO Thin-Film Transistors
Authors
Keywords
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Journal
ECS Journal of Solid State Science and Technology
Volume 3, Issue 2, Pages Q16-Q19
Publisher
The Electrochemical Society
Online
2013-11-24
DOI
10.1149/2.011402jss
References
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