标题
Charge Scattering and Mobility in Atomically Thin Semiconductors
作者
关键词
-
出版物
Physical Review X
Volume 4, Issue 1, Pages -
出版商
American Physical Society (APS)
发表日期
2014-03-19
DOI
10.1103/physrevx.4.011043
参考文献
相关参考文献
注意:仅列出部分参考文献,下载原文获取全部文献信息。- Remote phonon and impurity screening effect of substrate and gate dielectric on electron dynamics in single layer MoS2
- (2013) Lang Zeng et al. APPLIED PHYSICS LETTERS
- Band-like transport in high mobility unencapsulated single-layer MoS2 transistors
- (2013) Deep Jariwala et al. APPLIED PHYSICS LETTERS
- Thickness-Dependent Interfacial Coulomb Scattering in Atomically Thin Field-Effect Transistors
- (2013) Song-Lin Li et al. NANO LETTERS
- Mobility engineering and a metal–insulator transition in monolayer MoS2
- (2013) Branimir Radisavljevic et al. NATURE MATERIALS
- Mobility enhancement and temperature dependence in top-gated single-layer MoS2
- (2013) Zhun-Yong Ong et al. PHYSICAL REVIEW B
- Acoustic phonon limited mobility in two-dimensional semiconductors: Deformation potential and piezoelectric scattering in monolayer MoS2from first principles
- (2013) Kristen Kaasbjerg et al. PHYSICAL REVIEW B
- Intrinsic electrical transport properties of monolayer silicene and MoS2from first principles
- (2013) Xiaodong Li et al. PHYSICAL REVIEW B
- Intrinsic Piezoelectricity in Two-Dimensional Materials
- (2012) Karel-Alexander N. Duerloo et al. Journal of Physical Chemistry Letters
- High-Performance Single Layered WSe2 p-FETs with Chemically Doped Contacts
- (2012) Hui Fang et al. NANO LETTERS
- Phonon-limited mobility inn-type single-layer MoS2from first principles
- (2012) Kristen Kaasbjerg et al. PHYSICAL REVIEW B
- Superconducting Dome in a Gate-Tuned Band Insulator
- (2012) J. T. Ye et al. SCIENCE
- Probing charge scattering mechanisms in suspended graphene by varying its dielectric environment
- (2012) A.K.M. Newaz et al. Nature Communications
- High-mobility and low-power thin-film transistors based on multilayer MoS2 crystals
- (2012) Sunkook Kim et al. Nature Communications
- Inelastic scattering and current saturation in graphene
- (2010) Vasili Perebeinos et al. PHYSICAL REVIEW B
- Effect of high-κgate dielectrics on charge transport in graphene-based field effect transistors
- (2010) Aniruddha Konar et al. PHYSICAL REVIEW B
- Atomically ThinMoS2: A New Direct-Gap Semiconductor
- (2010) Kin Fai Mak et al. PHYSICAL REVIEW LETTERS
- Intrinsic and extrinsic performance limits of graphene devices on SiO2
- (2008) Jian-Hao Chen et al. Nature Nanotechnology
- Substrate-limited electron dynamics in graphene
- (2008) S. Fratini et al. PHYSICAL REVIEW B
Find the ideal target journal for your manuscript
Explore over 38,000 international journals covering a vast array of academic fields.
SearchBecome a Peeref-certified reviewer
The Peeref Institute provides free reviewer training that teaches the core competencies of the academic peer review process.
Get Started