Mobility enhancement and temperature dependence in top-gated single-layer MoS2

Top oxide thickness dependence of remote phonon and charged impurity scattering in top-gated graphene

(2013) Zhun-Yong Ong et al.   APPLIED PHYSICS LETTERS

Modulating electronic transport properties of MoS2 field effect transistor by surface overlayers

(2013) Jiadan Lin et al.   APPLIED PHYSICS LETTERS

Electrical performance of monolayer MoS2 field-effect transistors prepared by chemical vapor deposition

(2013) Matin Amani et al.   APPLIED PHYSICS LETTERS

Band-like transport in high mobility unencapsulated single-layer MoS2 transistors

(2013) Deep Jariwala et al.   APPLIED PHYSICS LETTERS

Intrinsic Electronic Transport Properties of High-Quality Monolayer and Bilayer MoS2

(2013) Britton W. H. Baugher et al.   NANO LETTERS

Mobility engineering and a metal–insulator transition in monolayer MoS2

(2013) Branimir Radisavljevic et al.   NATURE MATERIALS

Measurement of mobility in dual-gated MoS2 transistors

(2013) Michael S. Fuhrer et al.   Nature Nanotechnology

Theory of remote phonon scattering in top-gated single-layer graphene

(2013) Zhun-Yong Ong et al.   PHYSICAL REVIEW B

Intrinsic electrical transport properties of monolayer silicene and MoS2from first principles

(2013) Xiaodong Li et al.   PHYSICAL REVIEW B

Mobility enhancement and highly efficient gating of monolayer MoS2transistors with polymer electrolyte

(2012) Ming-Wei Lin et al.   JOURNAL OF PHYSICS D-APPLIED PHYSICS

Electronics and optoelectronics of two-dimensional transition metal dichalcogenides

(2012) Qing Hua Wang et al.   Nature Nanotechnology

Erratum: Theory of interfacial plasmon-phonon scattering in supported graphene [Phys. Rev. B86, 165422 (2012)]

(2012) Zhun-Yong Ong et al.   PHYSICAL REVIEW B

Charged impurity scattering in top-gated graphene nanostructures

(2012) Zhun-Yong Ong et al.   PHYSICAL REVIEW B

Phonon-limited mobility inn-type single-layer MoS2from first principles

(2012) Kristen Kaasbjerg et al.   PHYSICAL REVIEW B

Theory of interfacial plasmon-phonon scattering in supported graphene

(2012) Zhun-Yong Ong et al.   PHYSICAL REVIEW B

Nature of Electronic States in Atomically Thin MoS2 Field-Effect Transistors

(2011) Subhamoy Ghatak et al.   ACS Nano

Enhanced Transport and Transistor Performance with Oxide Seeded High-κ Gate Dielectrics on Wafer-Scale Epitaxial Graphene

(2011) Matthew J. Hollander et al.   NANO LETTERS

How Good Can Monolayer MoS2Transistors Be?

(2011) Youngki Yoon et al.   NANO LETTERS

Single-layer MoS2 transistors

(2011) B. Radisavljevic et al.   Nature Nanotechnology

Epitaxial Graphene Materials Integration: Effects of Dielectric Overlayers on Structural and Electronic Properties

(2010) Joshua A. Robinson et al.   ACS Nano

Dielectric thickness dependence of carrier mobility in graphene with HfO2 top dielectric

(2010) Babak Fallahazad et al.   APPLIED PHYSICS LETTERS

Effect of Top Dielectric Medium on Gate Capacitance of Graphene Field Effect Transistors: Implications in Mobility Measurements and Sensor Applications

(2010) J. L. Xia et al.   NANO LETTERS

Deposition of High-QualityHfO2on Graphene and the Effect of Remote Oxide Phonon Scattering

(2010) K. Zou et al.   PHYSICAL REVIEW LETTERS

Realization of a high mobility dual-gated graphene field-effect transistor with Al2O3 dielectric

(2009) Seyoung Kim et al.   APPLIED PHYSICS LETTERS

Screening-induced temperature-dependent transport in two-dimensional graphene

(2009) E. H. Hwang et al.   PHYSICAL REVIEW B

Theory of charged impurity scattering in two-dimensional graphene

(2009) S. Adam et al.   SOLID STATE COMMUNICATIONS

Origin of the energy bandgap in epitaxial graphene

(2008) S.Y. Zhou et al.   NATURE MATERIALS

Substrate-limited electron dynamics in graphene

(2008) S. Fratini et al.   PHYSICAL REVIEW B

Mobility in graphene double gate field effect transistors

(2008) M.C. Lemme et al.   SOLID-STATE ELECTRONICS