Silicon carbide: A unique platform for metal-oxide-semiconductor physics

Deuterium absorption from the D2O exposure of oxidized 4H-SiC (0001), ( 0001¯), and ( 112¯0) surfaces

(2015) Gang Liu et al.   APPLIED PHYSICS LETTERS

Effects and mechanisms of RIE on SiC inversion layer mobility and its recovery

(2015) Gang Liu et al.   APPLIED SURFACE SCIENCE

Interface Properties of 4H-SiC ( $11\bar {2}0$ ) and ( $1\bar {1}00$ ) MOS Structures Annealed in NO

(2015) Seiya Nakazawa et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

Threshold Voltage Instability in 4H-SiC MOSFETs With Phosphorus-Doped and Nitrided Gate Oxides

(2015) Hiroshi Yano et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

Basic Mechanisms of Threshold-Voltage Instability and Implications for Reliability Testing of SiC MOSFETs

(2015) Aivars J. Lelis et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

Water absorption in thermally grown oxides on SiC and Si: Bulk oxide and interface properties

(2014) Gang Liu et al.   APPLIED PHYSICS LETTERS

Effects of interface state density on 4H-SiC n-channel field-effect mobility

(2014)   APPLIED PHYSICS LETTERS

High mobility 4H-SiC (0001) transistors using alkali and alkaline earth interface layers

(2014) Daniel J. Lichtenwalner et al.   APPLIED PHYSICS LETTERS

Fabrication of SiO2/4H-SiC (0001) interface with nearly ideal capacitance-voltage characteristics by thermal oxidation

(2014) Richard Heihachiro Kikuchi et al.   APPLIED PHYSICS LETTERS

Kinetics of nitrogen incorporation at the SiO2/4H-SiC interface during an NO passivation

(2014) Zengjun Chen et al.   APPLIED SURFACE SCIENCE

Silicon Carbide Integrated Circuits With Stable Operation Over a Wide Temperature Range

(2014) Reza Ghandi et al.   IEEE ELECTRON DEVICE LETTERS

Improved Channel Mobility in 4H-SiC MOSFETs by Boron Passivation

(2014) Dai Okamoto et al.   IEEE ELECTRON DEVICE LETTERS

High Channel Mobility 4H-SiC MOSFETs by Antimony Counter-Doping

(2014) Aaron Modic et al.   IEEE ELECTRON DEVICE LETTERS

Characterization of very fast states in the vicinity of the conduction band edge at the SiO2/SiC interface by low temperature conductance measurements

(2014) Hironori Yoshioka et al.   JOURNAL OF APPLIED PHYSICS

Atomic state and characterization of nitrogen at the SiC/SiO2 interface

(2014) Y. Xu et al.   JOURNAL OF APPLIED PHYSICS

Nitrogen Plasma Processing of SiO2/4H-SiC Interfaces

(2014) A. Modic et al.   JOURNAL OF ELECTRONIC MATERIALS

Roughness of the SiC/SiO2 vicinal interface and atomic structure of the transition layers

(2014) Peizhi Liu et al.   JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A

Enhanced Field Effect Mobility on 4H-SiC by Oxidation at 1500°C

(2014) S. M. Thomas et al.   IEEE Journal of the Electron Devices Society

Comparative study of gate oxide in 4H-SiC lateral MOSFETs subjected to post-deposition-annealing in N2O and POCl3

(2013) P. Fiorenza et al.   APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING

Deep Levels Generated by Thermal Oxidation in n-Type 4H-SiC

(2013) Koutarou Kawahara et al.   Applied Physics Express

SiO2/4H-SiC interface doping during post-deposition-annealing of the oxide in N2O or POCl3

(2013) P. Fiorenza et al.   APPLIED PHYSICS LETTERS

Theory of near-interface trap quenching by impurities in SiC-based metal-oxide-semiconductor devices

(2013) B. R. Tuttle et al.   APPLIED PHYSICS LETTERS

The effect of nitric oxide anneals on silicon vacancies at and very near the interface of 4H SiC metal oxide semiconducting field effect transistors using electrically detected magnetic resonance

(2013) C. J. Cochrane et al.   APPLIED PHYSICS LETTERS

Enhanced Inversion Mobility on 4H-SiC $(\hbox{11}\overline{\hbox{2}} \hbox{0})$ Using Phosphorus and Nitrogen Interface Passivation

(2013) Gang Liu et al.   IEEE ELECTRON DEVICE LETTERS

Competing atomic and molecular mechanisms of thermal oxidation—SiC versus Si

(2013) Xiao Shen et al.   JOURNAL OF APPLIED PHYSICS

Identification of intrinsic electron trapping sites in bulk amorphous silica from ab initio calculations

(2013) Al-Moatasem El-Sayed et al.   MICROELECTRONIC ENGINEERING

Wide-Gap Semiconducting Graphene from Nitrogen-Seeded SiC

(2013) F. Wang et al.   NANO LETTERS

Development of gallium oxide power devices

(2013) Masataka Higashiwaki et al.   PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE

Insight into the initial oxidation of 4H-SiC from first-principles thermodynamics

(2013) Wenbo Li et al.   PHYSICAL REVIEW B

A Comprehensive Review of Semiconductor Ultraviolet Photodetectors: From Thin Film to One-Dimensional Nanostructures

(2013) Liwen Sang et al.   SENSORS

Coexistence of Small Threshold Voltage Instability and High Channel Mobility in 4H-SiC($000\bar{1}$) Metal–Oxide–Semiconductor Field-Effect Transistors

(2012) Mitsuo Okamoto et al.   Applied Physics Express

Generation of very fast states by nitridation of the SiO2/SiC interface

(2012) Hironori Yoshioka et al.   JOURNAL OF APPLIED PHYSICS

Accurate evaluation of interface state density in SiC metal-oxide-semiconductor structures using surface potential based on depletion capacitance

(2012) Hironori Yoshioka et al.   JOURNAL OF APPLIED PHYSICS

Behavior of nitrogen atoms in SiC-SiO2 interfaces studied by electrically detected magnetic resonance

(2011) T. Umeda et al.   APPLIED PHYSICS LETTERS

Atomic-scale origins of bias-temperature instabilities in SiC–SiO2 structures

(2011) Xiao Shen et al.   APPLIED PHYSICS LETTERS

Fixed nitrogen atoms in the SiO2/SiC interface region and their direct relationship to interface trap density

(2011) R. Kosugi et al.   APPLIED PHYSICS LETTERS

Scaling Between Channel Mobility and Interface State Density in SiC MOSFETs

(2011) John Rozen et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

An electrically detected magnetic resonance study of performance limiting defects in SiC metal oxide semiconductor field effect transistors

(2011) C. J. Cochrane et al.   JOURNAL OF APPLIED PHYSICS

High electron mobility due to sodium ions in the gate oxide of SiC-metal-oxide-semiconductor field-effect transistors

(2011) B. R. Tuttle et al.   JOURNAL OF APPLIED PHYSICS

Charge transition levels of carbon-, oxygen-, and hydrogen-related defects at the SiC/SiO2interface through hybrid functionals

(2011) Fabien Devynck et al.   PHYSICAL REVIEW B

Phosphorous passivation of the SiO2/4H–SiC interface

(2011) Y.K. Sharma et al.   SOLID-STATE ELECTRONICS

Structure and stoichiometry of (0001) 4H–SiC/oxide interface

(2010) Xingguang Zhu et al.   APPLIED PHYSICS LETTERS

Improved Inversion Channel Mobility in 4H-SiC MOSFETs on Si Face Utilizing Phosphorus-Doped Gate Oxide

(2010) Dai Okamoto et al.   IEEE ELECTRON DEVICE LETTERS

Inversion layer carrier concentration and mobility in 4H–SiC metal-oxide-semiconductor field-effect transistors

(2010) S. Dhar et al.   JOURNAL OF APPLIED PHYSICS

Deep levels induced by reactive ion etching in n- and p-type 4H–SiC

(2010) Koutarou Kawahara et al.   JOURNAL OF APPLIED PHYSICS

Elimination of the Major Deep Levels in n- and p-Type 4H-SiC by Two-Step Thermal Treatment

(2009) Toru Hiyoshi et al.   Applied Physics Express

Shape Control and Roughness Reduction of SiC Trenches by High-Temperature Annealing

(2009) Yasuyuki Kawada et al.   JAPANESE JOURNAL OF APPLIED PHYSICS

Density of interface states, electron traps, and hole traps as a function of the nitrogen density in SiO2 on SiC

(2009) John Rozen et al.   JOURNAL OF APPLIED PHYSICS

Vacancy-related defects and theEδ′center in amorphous silicon dioxide: Density functional calculations

(2009) Blair R. Tuttle et al.   PHYSICAL REVIEW B

First-principles investigation on initial stage of 2H-SiC(001) surface oxidation

(2009) JunJie Wang et al.   Science Bulletin

Time Dependence of Bias-Stress-Induced SiC MOSFET Threshold-Voltage Instability Measurements

(2008) Aivars J. Lelis et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

A Physical Model of High Temperature 4H-SiC MOSFETs

(2008) Siddharth Potbhare et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

First-principles-based investigation of kinetic mechanism of SiC(0001) dry oxidation including defect generation and passivation

(2008) Alexey Gavrikov et al.   JOURNAL OF APPLIED PHYSICS

Increase in oxide hole trap density associated with nitrogen incorporation at the SiO2/SiC interface

(2008) John Rozen et al.   JOURNAL OF APPLIED PHYSICS