Water assisted oxygen absorption on the instability of amorphous InAlZnO thin-film transistors
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Title
Water assisted oxygen absorption on the instability of amorphous InAlZnO thin-film transistors
Authors
Keywords
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Journal
RSC Advances
Volume 4, Issue 7, Pages 3145-3148
Publisher
Royal Society of Chemistry (RSC)
Online
2013-10-23
DOI
10.1039/c3ra44513e
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Related references
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- Origin of threshold voltage instability in indium-gallium-zinc oxide thin film transistors
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- Electronic transport properties of amorphous indium-gallium-zinc oxide semiconductor upon exposure to water
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- Bias-stress-induced stretched-exponential time dependence of threshold voltage shift in InGaZnO thin film transistors
- (2008) Jeong-Min Lee et al. APPLIED PHYSICS LETTERS
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