Origin of threshold voltage shift by interfacial trap density in amorphous InGaZnO thin film transistor under temperature induced stress

Effect of channel thickness on density of states in amorphous InGaZnO thin film transistor

(2011) Sang Yeol Lee et al.   APPLIED PHYSICS LETTERS

Role of silicon in silicon-indium-zinc-oxide thin-film transistor

(2010) Eugene Chong et al.   APPLIED PHYSICS LETTERS

Thin-Film Transistors

(2009) Robert A. Street   ADVANCED MATERIALS

Role of Gallium Doping in Dramatically Lowering Amorphous-Oxide Processing Temperatures for Solution-Derived Indium Zinc Oxide Thin-Film Transistors

(2009) Sunho Jeong et al.   ADVANCED MATERIALS

High performance thin film transistor with cosputtered amorphous Zn–In–Sn–O channel: Combinatorial approach

(2009) Min Ki Ryu et al.   APPLIED PHYSICS LETTERS

Novel ZrInZnO Thin-film Transistor with Excellent Stability

(2008) Jin-Seong Park et al.   ADVANCED MATERIALS

Subgap states in transparent amorphous oxide semiconductor, In–Ga–Zn–O, observed by bulk sensitive x-ray photoelectron spectroscopy

(2008) Kenji Nomura et al.   APPLIED PHYSICS LETTERS

Modeling of amorphous InGaZnO thin-film transistors based on the density of states extracted from the optical response of capacitance-voltage characteristics

(2008) Kichan Jeon et al.   APPLIED PHYSICS LETTERS

Extraction of Density of States in Amorphous GaInZnO Thin-Film Transistors by Combining an Optical Charge Pumping and Capacitance–Voltage Characteristics

(2008) Jun-Hyun Park et al.   IEEE ELECTRON DEVICE LETTERS