Structure–property relationship and interfacial phenomena in GaN grown on C-plane sapphire via plasma-enhanced atomic layer deposition
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Title
Structure–property relationship and interfacial phenomena in GaN grown on C-plane sapphire via plasma-enhanced atomic layer deposition
Authors
Keywords
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Journal
RSC Advances
Volume 5, Issue 71, Pages 57865-57874
Publisher
Royal Society of Chemistry (RSC)
Online
2015-06-25
DOI
10.1039/c5ra07709e
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