Structure–property relationship and interfacial phenomena in GaN grown on C-plane sapphire via plasma-enhanced atomic layer deposition

Title
Structure–property relationship and interfacial phenomena in GaN grown on C-plane sapphire via plasma-enhanced atomic layer deposition
Authors
Keywords
-
Journal
RSC Advances
Volume 5, Issue 71, Pages 57865-57874
Publisher
Royal Society of Chemistry (RSC)
Online
2015-06-25
DOI
10.1039/c5ra07709e

Ask authors/readers for more resources

Find Funding. Review Successful Grants.

Explore over 25,000 new funding opportunities and over 6,000,000 successful grants.

Explore

Discover Peeref hubs

Discuss science. Find collaborators. Network.

Join a conversation